Atomistic Simulation of the Effect of Dissociative Adsorption of Water on the Surface Structure and Stability of Calcium and Magnesium Oxide

1995 ◽  
Vol 99 (47) ◽  
pp. 17219-17225 ◽  
Author(s):  
N. H. de Leeuw ◽  
G. W. Watson ◽  
S. C. Parker
2003 ◽  
Vol 107 (31) ◽  
pp. 7676-7682 ◽  
Author(s):  
Sebastien Kerisit ◽  
Stephen C. Parker ◽  
John H. Harding

2012 ◽  
Vol 116 (24) ◽  
pp. 13240-13251 ◽  
Author(s):  
Jeremy P. Allen ◽  
Arnaud Marmier ◽  
Stephen C. Parker

2009 ◽  
Vol 113 (19) ◽  
pp. 8320-8328 ◽  
Author(s):  
Jeremy P. Allen ◽  
Stephen C. Parker ◽  
David W. Price

2008 ◽  
Vol 43 (12) ◽  
pp. 4157-4162 ◽  
Author(s):  
Christopher R. Stanek ◽  
Averyl H. H. Tan ◽  
Scott L. Owens ◽  
Robin W. Grimes

AbstractAtomistic simulation techniques have been used to investigate the dissociative adsorption of water on the (110), (111), and (100) low index surfaces of CeO2, as well as a so-called “trench” surface configuration. Several different coverages of water have been considered to better understand how the hydroxylation process progresses. Hydroxylation energies and surface energies of CeO2 calculated via atomistic simulations are compared to similar results for other fluorite oxides. Finally, the modification of CeO2 crystallite morphology in the presence of water is predicted from the changes in surface energy and the implications of these morphological changes for glass polishing are discussed.


2021 ◽  
Vol 19 (4) ◽  
pp. 77-86
Author(s):  
A.S. Ahmed ◽  
I.H. Kadim ◽  
A.A. Ramadhan

Structural properties of TiO2 thin films play a main role in determine the characteristic of the thin films especially their stability and activity, the total pressure has a great influence in determine the crystallinity of the films and the orientation of the facets of their structure, especially the two facet (101) and (001), the enhancing the structure properties will cause to enhance the application efficiency of TiO2 thin films such as the dissociative adsorption of water and the solar cell. Many researcher interest to prepare the TiO2 thin film under the low range of total pressure (less than to 10 Pa) to avoid the low degree of crystalline and the mixed of two phase anatas and rutile, so in our work tend to prepare TiO2 thin films under a high total pressure (more than 10 Pa) with values (10, 20, 50 and 100) Pa and with (1:1) mixed ratio of Argon and Oxygen gases, the pattern of X-Ray diffraction revealed that the structure was polycrystalline and the phase was anatas. The intensity at 2θ ≈ 25.00°, 37.00°, 53.00° and 55.00° correspond to the diffraction from (101), (004), (105) and (211) planes respectively. The intensity and number of peaks decreased with increased the total pressure, the plane (101) could be considered as a prefential growth plane which take a high texture factor and this would decreased with increased the total pressure, the ratio of texture factor between 001 and 101 will increase with decrease the total pressure, The lattice constant and the interplanar distance displayed a greater deviation compared with the standard value at the lowest total pressure than the decrease observed with increased total pressure.


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