Ionization of High-Density Deep Donor Defect States Explains the Low Photovoltage of Iron Pyrite Single Crystals

2014 ◽  
Vol 136 (49) ◽  
pp. 17163-17179 ◽  
Author(s):  
Miguel Cabán-Acevedo ◽  
Nicholas S. Kaiser ◽  
Caroline R. English ◽  
Dong Liang ◽  
Blaise J. Thompson ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Density ◽  
Iron Pyrite ◽  
Defect States ◽  
Deep Donor ◽  
Donor Defect

PHOTOELECTRIC PROPERTIES OF MnIn2S4 SINGLE CRYSTALS

2021 ◽  
Vol 88 (6) ◽  
pp. 967-969
Author(s):  
N. N. Niftiyev
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Spectral Distribution ◽  
Photoconductivity Spectrum ◽  
Intracenter Transition ◽  
Photoelectric Properties ◽  
Impurity Photoconductivity ◽  
Donor Defect

The spectral distribution of the photoconductivity and the temperature dependence of the photocurrent of MnIn2S4 single crystals are investigated. The intrinsic, impurity photoconductivity and a maximum at an energy of 2.69 eV, which is associated with the intracenter transition of Mn2+ ions (6A1→4A1), are revealed in the photoconductivity spectrum. The region of the wavelengths of 600–1000 nm appears with an excess of manganese in the crystals and is caused by a donor defect. At temperatures of 80—145 K, the increase in the photocurrent is associated with the thermal depletion of the adhesion levels. The activation energy of the adhesion levels is determined.

Impurity-Induced Defect States in Pb1−xGexTe Alloys Doped With Gallium

1999 ◽  
Vol 607 ◽  
Author(s):  
E.P. Skipetrov ◽  
E.A. Zvereva ◽  
V.V. Belousov ◽  
L.A. Skipetrova
Keyword(s):  
Low Temperature ◽  
Heat Source ◽  
Single Crystals ◽  
Deep Level ◽  
Persistent Photoconductivity ◽  
Background Illumination ◽  
Defect States ◽  
Galvanomagnetic Properties ◽  
Controlled Illumination ◽  
Temperature Activation

AbstractGalvanomagnetic properties of n-Pb1−xGexTe<Ga>(O.04≤x≤O.08) single crystals have been investigated in the shielded from external background illumination chamber and under controlled illumination from infrared heat source. Low temperature activation range of the impurity conductivity on the dark curves of ρ(l/T) was revealed and attributed to the appearance of gallium-induced deep level EGa in the gap of the alloys. It was shown that the alloys possess high infrared photosensitivity at temperatures below Tc=50%60 K, and effect of the persistent photoconductivity at helium temperatures was revealed.

Defect states in ZnSe single crystals irradiated with gamma rays

1991 ◽  
Vol 69 (1) ◽  
pp. 291-297 ◽  
Author(s):  
M. Karai ◽  
K. Kido ◽  
H. Naito ◽  
K. Kurosawa ◽  
M. Okuda ◽  
...  
Keyword(s):  
Single Crystals ◽  
Gamma Rays ◽  
Defect States

Photoacoustic spectroscopy of defect states in CuInSe2 single crystals

1992 ◽  
Vol 83 (8) ◽  
pp. 587-591 ◽  
Author(s):  
A Zegadi ◽  
MA Slifkin ◽  
M Djamin ◽  
RD Tomlinson ◽  
H Neumann
Keyword(s):  
Single Crystals ◽  
Photoacoustic Spectroscopy ◽  
Defect States

scholarly journals Optical and Electrical Transport Evaluations of n-Type Iron Pyrite Single Crystals

ACS Omega ◽  
2021 ◽  
Author(s):  
Shunsuke Uchiyama ◽  
Ryosuke Sato ◽  
Ryoji Katsube ◽  
Muhammad Monirul Islam ◽  
Hideaki Adachi ◽  
...  
Keyword(s):  
Single Crystals ◽  
Electrical Transport ◽  
Iron Pyrite

Investigation of Near-IR Emission from Hydrogenated Nanocrystalline Silicon – The Oxygen Defect Band

2010 ◽  
Vol 1245 ◽  
Author(s):  
Jeremy David Fields ◽  
Craig Taylor ◽  
David Bobela ◽  
Baojie Yan ◽  
Guozhen Yue
Keyword(s):  
Nanocrystalline Silicon ◽  
Defect States ◽  
Photoluminescence Band ◽  
Defect Band ◽  
Near Ir ◽  
Deep Donor ◽  
Spectroscopy Studies ◽  
Oxygen Precipitates ◽  
Ir Emission ◽  
Hydrogen Effusion

AbstractHydrogenated nanocrystalline silicon (nc-Si:H), a mixture of nanometer sized crystallites and amorphous silicon tissue, demonstrates a photoluminescence band centered at ∼ 0.7 eV, which emerges in response to annealing at an onset temperature of ∼ 200–300 °C. This temperature range correlates well with hydrogen effusion spectroscopy studies, and evidence suggests thermal liberation of hydrogen from grain boundary regions allows oxidation of crystallite surfaces during annealing. We tentatively attribute the 0.7 eV PL in nc-Si:H to deep donor defect states related to oxygen precipitates, and argue for the possible involvement of dislocations inside of crystallites to accompany these precipitates.

scholarly journals High-Density Well-Aligned Dislocations Introduced by Plastic Deformation in Bi1−xSbx Topological Insulator Single Crystals

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 317 ◽  
Author(s):  
Yuki Tokumoto ◽  
Riku Fujiwara ◽  
Keiichi Edagawa
Keyword(s):  
Single Crystals ◽  
Surface States ◽  
Zone Melting ◽  
High Density ◽  
Experimental Investigations ◽  
Dirac Fermions ◽  
Fundamental Study ◽  
Transmission Electron ◽  
Spin Polarized ◽  
Device Applications

Topological insulators (TIs) have a bulk bandgap and gapless edge or surface states that host helically spin-polarized Dirac fermions. Theoretically, it has been predicted that gapless states could also be formed along dislocations in TIs. Recently, conductivity measurements on plastically deformed bismuth antimony (Bi1−xSbx) TIs have revealed excess conductivity owing to dislocation conduction. For further application of them, fundamental study on dislocations in TIs is indispensable. Dislocations controlled based on fundamental studies could potentially be useful not only for experimental investigations of the dislocation properties but also for diverse device applications. In the present study, Bi1−xSbx TI single crystals were fabricated by a zone-melting method. The crystals were plastically deformed at room temperature. The resultant dislocations were observed by transmission electron microscopy (TEM). It was found that high-density dislocations with the Burgers vector satisfying the condition for the formation of gapless states were successfully introduced. The dislocations were mostly of edge type with lengths on the order of more than a few micrometers.

Sign in / Sign up

Export Citation Format

Share Document