Increased room temperature ferromagnetism in Co-doped tetrahedral perovskite niobates

Dilute magnetic semiconductors (DMSs), such as (In, Mn)As and (Ga, Mn)As prototypes, are limited to III–V semiconductors with Curie temperatures ( T c ) far from room temperature, thereby hindering their wide application. Here, one kind of DMS based on perovskite niobates is reported. BaM x Nb (1− x ) O 3− δ ( M = Fe, Co) powders are prepared by the composite-hydroxide-mediated method. The addition of M elements endows BaM x Nb (1− x ) O 3− δ with local ferromagnetism. The tetragonal BaCo x Nb (1− x ) O 3− δ nanocrystals can be obtained by Co doping, which shows strong saturation magnetization ( M sat ) of 2.22 emu g −1 , a remnant magnetization ( M r ) of 0.084 emu g −1 and a small coercive field ( H c ) of 167.02 Oe at room temperature. The ab initio calculations indicate that Co doping could lead to a 64% local spin polarization at the Fermi level ( E F ) with net spin DOS of 0.89 electrons eV −1 , this result shows the possibility of maintaining strong ferromagnetism at room temperature. In addition, the trade-off effect between the defect band absorption and ferromagnetic properties of BaM x Nb (1− x ) O 3− δ is verified experimentally and theoretically.

Double defects-induced elastic wave coupling and energy localization in a phononic crystal

This study aims to investigate elastic wave localization that leverages defect band splitting in a phononic crystal with double defects through in-depth analysis of comparison of numerical and experimental results. When more than one defect is created inside a phononic crystal, these defects can interact with each other, resulting in a distinctive physical phenomenon from a single defect case: defect band splitting. For a phononic crystal consisting of circular-hole type unit cells in a thin aluminum plate, under A0 (the lowest antisymmetric) Lamb waves, both numerical simulations and experiments successfully confirm the defect band splitting phenomenon via frequency response functions for the out-of-plane displacement calculated/measured at the double defects within a finite distance. Furthermore, experimental visualization of in-phase and out-of-phase defect mode shapes at each frequency of the split defect bands is achieved and found to be in excellent agreement with the simulated results. Different inter-distance combinations of the double defects reveal that the degree of the defect band splitting decreases with the increasing distance due to weaker coupling between the defects. This work may shed light on engineering applications of a multiple-defect-introduced phononic crystal, including broadband energy harvesting, frequency detectors, and elastic wireless power transfer.

Behaviors of the multiple interface states in photonic crystal heterostructure with frequency-dependent dielectric functions

In this paper, Dirac point method is used to study the interface state of one-dimensional photonic crystal heterojunction [Formula: see text] containing dispersive materials GaAs. We found that the energy levels of the interface states satisfy a simple sinusoidal function. We investigate the variation of the energy levels of the interface states with the incident angle, it is found that these interface states move toward high-frequency with the increase of the incident angle. At the same time, it is found that there is an extra localized band and it is further proved that the extra band corresponds to the defect band, and the energy levels of the defect band possess the same behavior with those of interface states.

Dispersion of Defects in TiO2 Semiconductor: Oxygen Vacancies in the Bulk and Surface of Rutile and Anatase

Oxygen deficiency (O-vacancy) contributes to the photoefficiency of TiO2 semiconductors by generating electron rich active sites. In this paper, the dispersion of O-vacancies in both bulk and surface of anatase and rutile phases was computationally investigated. The results showed that the O-vacancies dispersed in single- and double-cluster forms in the anatase and rutile phases, respectively, in both bulk and surface. The distribution of the O-vacancies was (roughly) homogeneous in anatase, and heterogenous in rutile bulk. The O-vacancy formation energy, width of defect band, and charge distribution indicated the overlap of the defect states in the rutile phase and thus eased the formation of clusters. Removal of the first and the second oxygen atoms from the rutile surface took less energy than the anatase one, which resulted in a higher deficiency concentration on the rutile surface. However, these deficiencies formed one active site per unit cell of rutile. On the other hand, the first O-vacancy formed on the surface and the second one formed in the subsurface of anatase (per unit cell). Supported by previous studies, we argue that this distribution of O-vacancies in anatase (surface and subsurface) could potentially create more active sites on its surface.