PHOTOELECTRIC PROPERTIES OF MnIn2S4 SINGLE CRYSTALS

2021 ◽  
Vol 88 (6) ◽  
pp. 967-969
Author(s):  
N. N. Niftiyev
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Spectral Distribution ◽  
Photoconductivity Spectrum ◽  
Intracenter Transition ◽  
Photoelectric Properties ◽  
Impurity Photoconductivity ◽  
Donor Defect

The spectral distribution of the photoconductivity and the temperature dependence of the photocurrent of MnIn2S4 single crystals are investigated. The intrinsic, impurity photoconductivity and a maximum at an energy of 2.69 eV, which is associated with the intracenter transition of Mn2+ ions (6A1→4A1), are revealed in the photoconductivity spectrum. The region of the wavelengths of 600–1000 nm appears with an excess of manganese in the crystals and is caused by a donor defect. At temperatures of 80—145 K, the increase in the photocurrent is associated with the thermal depletion of the adhesion levels. The activation energy of the adhesion levels is determined.

scholarly journals Фотоэлектрические свойства монокристаллов MnGaInS-=SUB=-4-=/SUB=-

2020 ◽  
Vol 90 (3) ◽  
pp. 427
Author(s):  
Н.Н. Нифтиев
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Band Gap ◽  
Wavelength Range ◽  
Spectral Distribution ◽  
Manganese Deficiency ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Acceptor Defect

The spectral distribution of photoconductivity and the temperature dependence of the photocurrent of monocrystals MnGaInS4 are studied. The intrinsic and extrinsic photoconductivities are revealed in the spectrum of photoconductivity. The wavelength range of 0.640–0.760 μm is shown when manganese deficiency in crystals appears and is due to an acceptor defect. The temperature dependence of the band gap in the monocrystals MnGaInS4 is related to the electron – phonon interaction. In the studied temperatures, increase in the photocurrent is associated with the thermal depletion of the attachment levels. The activation energy of the attachment levels is estimated.

Diffusion von In und Cu in ZnS-Einkristallen

1969 ◽  
Vol 24 (9) ◽  
pp. 1301-1306 ◽  
Author(s):  
H. Nelkowski ◽  
G. Bollmann
Keyword(s):  
Experimental Data ◽  
Activation Energy ◽  
Diffusion Equation ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Diffusion Constant ◽  
Pair Formation ◽  
Concentration Profiles ◽  
Radioactive Tracers ◽  
Calculated Concentration

Abstract The diffusion of In and Cu in ZnS single crystals was investigated by means of radioactive tracers. The diffusion constant Do and the activation energy EA of the diffusion equation D = D0 · exp(- EA/kT) were determined by analysing the temperature dependence of the concentration profiles. The result for ln EA = 2,2 eV, D0 = 30cm2 s-1) is interpreted as a diffusion via Zn vacancies and that for Cu (EA - 0,79 eV, D0 = 2,6 · 10-3 cm2 s-1) as a diffusion via interstitial sites which probably is influenced by Zn vacancies. - Preceding doping with In significantly retards the Cu diffusion, consistent with the model of Cu-In pair formation. The reasons for some deviations of the experimental data from the calculated concentration profiles are discussed. - Diffusion measurements with high Cu-concentrations yield a Cu-solubility of 300 ppm at 840 K and 1000 ppm at 950 K.

Paramagnetische Resonanz von Mn++-Ionen in AgCl-Einkristallen

1962 ◽  
Vol 17 (2) ◽  
pp. 155-158 ◽  
Author(s):  
Jürgen Schneider ◽  
Subhas Ranjan Sircar
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Elevated Temperatures ◽  
Silver Chloride ◽  
Fixed Position ◽  
Paramagnetic Resonance ◽  
X Band ◽  
Wide Range

The paramagnetic resonance of manganese doped silver chloride single crystals has been observed at X-band frequencies over a wide range of temperature. At 77 °K the spectrum is that corresponding to a Mn++-ion associated with a nearest silver vacancy in a fixed position. At elevated temperatures, the angle dependent lines of the spectrum broaden out. due to the enhancement of jumping motion of the vacancies. From the temperature dependence of those lines, the activation energy for the motion of a silver vacancy bound to the Mn++-ion was found to be 0.30 ± 0.05 eV.

CREEP ACTIVATION ENERGY OF FLOW PROCESS IN Sn0.2Bi1.8Te3 SINGLE CRYSTALS

2004 ◽  
Vol 11 (04n05) ◽  
pp. 443-446
Author(s):  
P. H. SONI ◽  
C. F. DESAI ◽  
S. R. BHAVSAR
Keyword(s):  
Activation Energy ◽  
Time Dependence ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Vickers Microhardness ◽  
Indentation Creep ◽  
Flow Process ◽  
Creep Activation Energy ◽  
Temperature Range ◽  
Different Temperatures

Temperature dependence of the Vickers microhardness of Sn 0.2 Bi 1.8 Te 3 single crystals has been studied. Loading time dependence of microhardness at different temperatures has been used for creep study in the temperature range 303 K–373 K. The activation energy for indentation creep of the crystals has been evaluated.

DISSIPATION OF THE Bi2.4-xPbxSr2CaCu2O8+y INTRINSIC ARRAY JOSEPHSON JUNCTIONS

2005 ◽  
Vol 19 (01n03) ◽  
pp. 479-481
Author(s):  
Y. NIE ◽  
Z. H. WANG ◽  
L. QIU ◽  
S. Y. DING ◽  
J. GAO
Keyword(s):  
Activation Energy ◽  
Magnetic Fields ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Field Dependence ◽  
Doping Level ◽  
Josephson Junctions ◽  
Irreversibility Line ◽  
Out Of Plane

We have fabricated a small-sized mesa on the surface of the Bi 2.4-x Pb x Sr 2 CaCu 2 O 8+y single crystals and measured the temperature dependence of the out-of-plane resistivity in different magnetic fields. The irreversibility line H irr( T ) follows different law in different temperature regions. But as a whole, the higher doping level x is, the irreversibility line locates in a higher field. The field dependence of activation energy follows U eff∝ H -m, m increases when doping level x improves.

Studies on the Temperature Stability of Pure and Doped Triglycine Sulphate Crystals Using TGA/DTA

2020 ◽  
Vol 10 (3) ◽  
pp. 206-212
Author(s):  
Vijeesh Padmanabhan ◽  
Maneesha P. Madhu ◽  
Supriya M. Hariharan
Keyword(s):  
Thermal Analysis ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Temperature Stability ◽  
Bandgap Energy ◽  
Dsc Analysis ◽  
Slow Cooling ◽  
As Doping ◽  
Similar Dependence ◽  
Temperature Ranges

Aim: To study the temperature stability of TGS doped with ZnSO4, CdCl2, BaCl2, and compare it with that of pure TGS. Objectives: Synthesizing pure and doped TGS and studying their temperature dependence using TGA, DTA, and DSC analysis. Methods: Slow cooling solution growth was used to grow single crystals of pure and doped TGS. The TGA, DTA and DSC analysis was conducted for determining the temperature stability. Results: The thermal analysis of pure and doped TGS shows that the doped samples show a similar dependence on temperature as pure TGS. The temperature of decomposition of pure and doped samples (BTGS, ZTGS, CdTGS) was 226.60°C, 228.38°C, 229.13°C, and 239.13°C respectively. The melting onset of these samples was 214.51°C, 216.04°C, 217.69°C and 216.04°C respectively. Conclusion: The study shows that doping TGS with the above three described materials did not alter their temperature stability considerably. It is a good result as doping TGS, for varying its characteristics like absorbance, reflectance, bandgap energy, etc., which did not alter its temperature stability. Therefore, TGS doped with the above three dopants can be used at the same temperature ranges as of pure TGS but with much-improved efficiency.

Temperature dependence of the microhardness of beryllium single crystals and Be-Cu alloys

1975 ◽  
Vol 7 (10) ◽  
pp. 1251-1254
Author(s):  
S. S. Avotin ◽  
I. I. Papirov ◽  
G. F. Tikhinskii ◽  
A. D. Tkalenko ◽  
V. G. Tkachenko ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Cu Alloys
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