Phase-Equilibrium-Dominated Vapor−Liquid−Solid Growth Mechanism

2010 ◽  
Vol 132 (13) ◽  
pp. 4843-4847 ◽  
Author(s):  
Chengyu He ◽  
Xizhang Wang ◽  
Qiang Wu ◽  
Zheng Hu ◽  
Yanwen Ma ◽  
...  
Keyword(s):  
Phase Equilibrium ◽  
Growth Mechanism ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Vapor–Liquid–Solid Growth of 3C-SiC on α-SiC Substrates. 1. Growth Mechanism

2008 ◽  
Vol 8 (3) ◽  
pp. 1044-1050 ◽  
Author(s):  
Maher Soueidan ◽  
Gabriel Ferro ◽  
Olivier Kim-Hak ◽  
François Cauwet ◽  
Bilal Nsouli
Keyword(s):  
Growth Mechanism ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

scholarly journals Condensation Experiments of Mg-Silicate Minerals

1991 ◽  
Vol 126 ◽  
pp. 83-86
Author(s):  
A. Tsuchiyama
Keyword(s):  
Growth Mechanism ◽  
Fundamental System ◽  
Interplanetary Dust ◽  
Vapor Liquid Solid ◽  
Silicate Minerals ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

AbstractCondensation experiments were performed in the simple but most fundamental system Mg-Si-O-H with forsterite vaporization source. At temperatures above about 1000°C, euhedral crystals of forsterite (Mg2SiO4) of a few μm were formed. These crystals are similar to olivines in Allende matrix. At temperatures below about 1000°C, whiskers of forsterite and enstatite (MgSiO3) were formed by vapor-liquid-solid growth mechanism. These whiskers are different from enstatite whiskers in interplanetary dust, which were probably formed at small super coolings.

Gas phase equilibrium limitations on the vapor–liquid–solid growth of epitaxial silicon nanowires using SiCl4

2011 ◽  
Vol 26 (17) ◽  
pp. 2207-2214 ◽  
Author(s):  
Sarah M. Eichfeld ◽  
Haoting Shen ◽  
Chad M. Eichfeld ◽  
Suzanne E. Mohney ◽  
Elizabeth C. Dickey ◽  
...  
Keyword(s):  
Phase Equilibrium ◽  
Gas Phase ◽  
Silicon Nanowires ◽  
Epitaxial Silicon ◽  
Vapor Liquid Solid ◽  
Image Position ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Abstract

The effect of Sn addition on GaAs nanowire grown by vapor–liquid–solid growth mechanism

2018 ◽  
Vol 29 (46) ◽  
pp. 465601 ◽  
Author(s):  
Han Gao ◽  
Mykhaylo Lysevych ◽  
Hark Hoe Tan ◽  
Chennupati Jagadish ◽  
Jin Zou
Keyword(s):  
Growth Mechanism ◽  
Vapor Liquid Solid ◽  
Gaas Nanowire ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata
Keyword(s):  
High Pressure ◽  
Growth Condition ◽  
Growth Mechanism ◽  
Quantum Confinement ◽  
Critical Value ◽  
Extended Defects ◽  
Vapor Liquid Solid ◽  
Minimum Diameter ◽  
Vls Growth ◽  
Vapor Liquid

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

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