Controlling the Shape Anisotropy of Monoclinic Nb12O29 Nanocrystals Enables Tunable Electrochromic Spectral Range

Author(s):  
Hsin-Che Lu ◽  
Naman Katyal ◽  
Graeme Henkelman ◽  
Delia J. Milliron
2003 ◽  
Vol 104 ◽  
pp. 149-152 ◽  
Author(s):  
M. Wieland ◽  
R. Früke ◽  
T. Wilhein ◽  
U. Kleineberg ◽  
M. Pohl ◽  
...  

2018 ◽  
pp. 7-13
Author(s):  
Anton M. Mishchenko ◽  
Sergei S. Rachkovsky ◽  
Vladimir A. Smolin ◽  
Igor V . Yakimenko

Results of experimental studying radiation spatial structure of atmosphere background nonuniformities and of an unmanned aerial vehicle being the detection object are presented. The question on a possibility of its detection using optoelectronic systems against the background of a cloudy field in the near IR wavelength range is also considered.


JETP Letters ◽  
2020 ◽  
Vol 112 (1) ◽  
pp. 31-36
Author(s):  
V. I. Kukushkin ◽  
V. E. Kirpichev ◽  
E. N. Morozova ◽  
V. V. Solov’ev ◽  
Ya. V. Fedotova ◽  
...  

1976 ◽  
Vol 72 ◽  
pp. 75-78
Author(s):  
M. Grenon

The Geneva photometric system has been calibrated in terms of [M/H], θeff, Mv in the spectral range F5 to K4. As the spectral type is a datum generally available, we derive empirical relations showing the coupling of θeff and [M/H] at given spectral type and luminosity class. Similar relations are offered for the absolute magnitudes and provide a more accurate means for deriving spectroscopic parallaxes. Systematic effects on the estimation of the luminosity class are also shown.


1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.


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