Evidence for Preferential Surface Enrichment in the Surface Chemical Analysis of a Series of Poly(Butyl Methacrylate-co-methyl methacrylate) Latices Using X-ray Photoelectron Spectroscopy and Static Secondary Ion Mass Spectrometry

M. C. Davies; R. A. P. Lynn; J. Hearn; J. F. Watts; J. C. Vickerman; D. Johnson

doi:10.1021/la00017a015

Evidence for Preferential Surface Enrichment in the Surface Chemical Analysis of a Series of Poly(Butyl Methacrylate-co-methyl methacrylate) Latices Using X-ray Photoelectron Spectroscopy and Static Secondary Ion Mass Spectrometry

Langmuir ◽

10.1021/la00017a015 ◽

1994 ◽

Vol 10 (5) ◽

pp. 1399-1409 ◽

Cited By ~ 9

Author(s):

M. C. Davies ◽

R. A. P. Lynn ◽

J. Hearn ◽

J. F. Watts ◽

J. C. Vickerman ◽

...

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Photoelectron Spectroscopy ◽

Secondary Ion Mass Spectrometry ◽

Butyl Methacrylate ◽

Surface Chemical ◽

Surface Enrichment ◽

X Ray ◽

Secondary Ion ◽

Surface Chemical Analysis

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Surface chemical analysis. Depth profiling. Method for sputter rate determination in X-ray photoelectron spectroscopy. Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films

10.3403/30266480 ◽

2015 ◽

Keyword(s):

Mass Spectrometry ◽

Photoelectron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Surface Chemical ◽

X Ray ◽

Secondary Ion ◽

Surface Chemical Analysis

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Surface chemical analysis. Depth profiling. Method for sputter rate determination in X-ray photoelectron spectroscopy. Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films

10.3403/30266480u ◽

2015 ◽

Keyword(s):

Mass Spectrometry ◽

Photoelectron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Surface Chemical ◽

X Ray ◽

Secondary Ion ◽

Surface Chemical Analysis

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Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials

10.3403/02007712 ◽

2000 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Surface Chemical ◽

Atomic Concentration ◽

Ion Mass Spectrometry ◽

Doped Materials ◽

Secondary Ion ◽

Surface Chemical Analysis

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Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials

10.3403/30153671 ◽

2010 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Surface Chemical ◽

Atomic Concentration ◽

Ion Mass Spectrometry ◽

Doped Materials ◽

Secondary Ion ◽

Surface Chemical Analysis

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Surface chemical analysis. Secondary-ion mass spectrometry. Calibration of the mass scale for a time-of-flight secondary-ion mass spectrometer

10.3403/30199194 ◽

2011 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Mass Spectrometer ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Mass Scale ◽

Surface Chemical ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Surface Chemical Analysis

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon

10.3403/30199170u ◽

2015 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Surface Chemical ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Surface Chemical Analysis

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Surface chemical analysis. Secondary ion mass spectrometry. Correction method for saturated intensity in single ion counting dynamic secondary ion mass spectrometry

10.3403/30321725 ◽

2018 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Correction Method ◽

Surface Chemical ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Surface Chemical Analysis ◽

Saturated Intensity

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Surface Chemical Analysis of Carbohydrate Materials Used for Chromatography Media by Time-of-Flight Secondary Ion Mass Spectrometry

Analytical Chemistry ◽

10.1021/ac035457g ◽

2004 ◽

Vol 76 (7) ◽

pp. 1857-1864 ◽

Cited By ~ 9

Author(s):

Peter Sjövall ◽

Jukka Lausmaa ◽

Bo-Lennart Johansson ◽

Mikael Andersson

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Surface Chemical ◽

Ion Mass Spectrometry ◽

Materials Used ◽

Secondary Ion ◽

Surface Chemical Analysis

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Summary of ISO/TC 201 standard: XXII. ISO 22048:2004?Surface chemical analysis?Information format for static secondary ion mass spectrometry

Surface and Interface Analysis ◽

10.1002/sia.2001 ◽

2004 ◽

Vol 36 (13) ◽

pp. 1642-1644 ◽

Cited By ~ 6

Author(s):

I. S. Gilmore ◽

M. P. Seah ◽

A. Henderson

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Surface Chemical ◽

Ion Mass Spectrometry ◽

Information Format ◽

Secondary Ion ◽

Surface Chemical Analysis

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon

10.3403/02631515u ◽

2015 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Surface Chemical ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Surface Chemical Analysis

Download Full-text