1,2-Dipalmitoyl-sn-glycero-3-phosphocholine (DPPC)-Rich Domain Formation in Binary Phospholipid Vesicle Membranes: Two-Dimensional Nucleation and Growth

Langmuir ◽  
2014 ◽  
Vol 30 (31) ◽  
pp. 9484-9493 ◽  
Author(s):  
Dong Chen ◽  
Maria M. Santore
2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Lingli Huang ◽  
Fangyuan Zheng ◽  
Honglin Chen ◽  
Quoc Huy Thi ◽  
Xin Chen ◽  
...  

AbstractMartensite is a needle-shaped microstructure formed by a rapid, diffusionless transformation and significantly affects the mechanical properties of materials. Here, in two-dimensional ReS2 we show that martensite-like domain structures can form via a diffusionless transformation, involving small lattice deformations. By analyzing the strain distribution and topology of the as-grown chemical vapor deposition samples, we find that cooling-induced strain at the ReS2/substrate interface is responsible for the mechanical loading and is essential for martensite-like domain formation. Meanwhile, the effect of cooling rate, flake size and substrate on the microstructures revealed the mechanical origin of the transformation. The strain-induced lattice reconstructions are rationalized and possibly lead to ferroelastic effects. In view of the strong anisotropy in electronic and optical properties in two dimensional materials like ReS2, opportunities exist for strain-correlated micro/nanostructure engineering, which has potential use in next-generation strain-tunable devices.


Author(s):  
Mikihiro Hayashi ◽  
Haruna Obara ◽  
Yohei Miwa

The preparation of vitrimers with ionic components was demonstrated to investigate the effects of ion-rich domain formation on vitrimer properties, revealing that the degree of ion aggregation can be a factor in tuning the bond-exchange properties.


1987 ◽  
Vol 91 ◽  
Author(s):  
P.R. Pukite ◽  
P.I. Cohen

ABSTRACTReflection high energy electron diffraction (RHEED) measurements indicate that the adsorption of As on misoriented Si(100) surfaces drives a multilayer step transition. We find that the formation of multilayer steps is a strong function of substrate temperature and As pressure. Monolayer steps are metastable at low substrate temperature or As pressure. The subsequent nucleation and growth of GaAs by molecular beam epitaxy (MBE) is controlled by the initial Si step distribution. Single domain GaAs grown on the monolayer stepped substrate has Ga terminated steps. Conversely, single domain GaAs grown on the multilayer stepped substrate has As terminated steps.


Nano Letters ◽  
2003 ◽  
Vol 3 (7) ◽  
pp. 919-923 ◽  
Author(s):  
Mingliang Tian ◽  
Jinguo Wang ◽  
James Kurtz ◽  
Thomas E. Mallouk ◽  
M. H. W. Chan

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