Plasmon-Enhanced Photoresponse of Self-Powered Si Nanoholes Photodetector by Metal Nanowires

In this work, we report the development of self-powered photodetectors that integrate silicon nanoholes (SiNHs) and four different types of metal nanowires (AgNWs, AuNWs, NiNWs, PtNWs) applied on the SiNHs’ surface using the solution processing method. The effectiveness of the proposed architectures is evidenced through extensive experimental and simulation analysis. The AgNWs/SiNHs device showed the highest photo-to-dark current ratio of 2.1 × 10−4, responsivity of 30 mA/W and detectivity of 2 × 1011 Jones along with the lowest noise equivalent power (NEP) parameter of 2.4 × 10−12 WHz−1/2 in the blue light region. Compared to the bare SiNHs device, the AuNWs/SiNHs device had significantly enhanced responsivity up to 15 mA/W, especially in the red and near-infrared spectral region. Intensity-modulated photovoltage spectroscopy (IMVS) measurements revealed that the AgNWs/SiNHs device generated the longest charge carrier lifetime at 470 nm, whereas the AuNWs/SiNHs showed the slowest recombination rate at 627 nm. Furthermore, numerical simulation confirmed the local field enhancement effects at the MeNWs and SiNHs interface. The study demonstrates a cost-efficient and scalable strategy to combine the superior light harvesting properties of SiNHs with the plasmonic absorption of metallic nanowires (MeNWs) towards enhanced sensitivity and spectral-selective photodetection induced by the local surface plasmon resonance effects.

Copper Nanowires for Transparent Electrodes: Properties, Challenges and Applications

Transparent electrodes are essential elements of devices bearing a screen or display, as well as solar cells, LEDs etc. To overcome the drawbacks presented by indium tin oxide, nanomaterials have been proposed for a long time as alternatives. Metal nanowires are particularly interesting for their high intrinsic electrical conductivity. Copper nanowires have attracted wide interest due to the low cost and high abundancy of the starting material. However, they are easily oxidized thus suitable strategies must be devised to prevent it. This review discusses the fundamental properties and challenges of copper nanowires, focusing on the efforts made to make them longer and thinner then the strategies to prevent oxidation and to join them in the network are presented. After that, mechanical properties are summarized and applications are presented, before conclusions and perspectives are finally given.

Effect of size and shape on the elastic modulus of metal nanowires

Size effects decisively influence the properties of materials at small length scales. In the context of mechanical properties, the trend of ‘smaller is stronger’ has been well established. This statement refers to an almost universal trend of increased strength with decreasing size. A strong influence of size on the elastic properties has also been widely reported, albeit without a clear trend. However, the influence of nanostructure shape on the mechanical properties has been critically neglected. Here, we demonstrate a profound influence of shape and size on the elastic properties of materials on the example of gold nanowires. The elastic properties are determined using in-situ mechanical testing in scanning and transmission electron microscopy by means of resonance excitation and uniaxial tension. The combination of bending and tensile load types allows for an independent and correlative calculation of the Young's modulus. We find both cases of softening as well as stiffening, depending critically on the interplay between size and shape of the wires. Graphic abstract

Microsphere-assisted manipulation of a single Ag nanowire

Metal nanowires are promising building blocks for optoelectronic nanodevices, so their independent and precise manipulation is urgently needed. However, the direct optical manipulation methods are severely hampered due to the high absorption and scattering characteristics of the metal nanowires. Here, a microsphere-assisted indirect optical manipulation method is proposed, and precise manipulation of a single Ag nanowire is demonstrated in liquid. The microsphere is actuated to rotate to generate a microvortex by dynamic optical traps. Under the action of shear stress, the Ag nanowire within the microvortex can be controllably rotated and accurately orientated. By manipulating the position of the microsphere using a single optical trap, a precise positioning of the nanowire can be achieved under the action of pushing force. On this basis, the Ag nanowire-based structures were assembled. This indirect optical manipulation avoids the direct interaction between the light and the nanowires, which makes it independent of both the laser (power, wavelength) and the nanowire (material, size, and shape). Hence, the microsphere-assisted manipulation method is simple and general for independent and precise manipulation of a single nanowire, which is of great significance to the fabrication of optoelectronic nanodevices.

Trapping of Electrons around Nanoscale Metallic Wires Embedded in a Semiconductor Medium

We predict that conduction electrons in a semiconductor film containing a centered square array of metal nanowires normal to its plane are bound in quantum states around the central wires, if a positive bias voltage is applied between the wires at the square vertices and the latter. We obtain and discuss the eigenenergies and eigenfunctions of two models with different dimensions. The results show that the eigenstates can be grouped into different shells. The energy differences between the shells is typically a few tens of meV, which corresponds to frequencies of emitted or absorbed photons in a range of 3THz to 20THz approximately. These energy differences strongly depend on the bias voltage. We calculate the linear response of individual electrons on the ground level of our models to large-wavelength electromagnetic waves whose electric field is in the plane of the semiconductor film. The computed oscillator strengths are dominated by the transitions to the states in each shell whose wave function has a single radial node line normal to the wave electric field. We include the effect of the image charge induced on the central metal wires and show that it modifies the oscillator strengths so that their sum deviates from the value given by the Thomas-Reiche-Kuhn rule. We report the linear response, or polarizability, versus photon energy, of the studied models and their absorption spectra. The latter show well-defined peaks as expected from the study of the oscillator strengths. We show that the position of these absorption peaks is strongly dependent on the bias voltage so that the frequency of photon absorption or emission in the systems described here is easily tunable. This makes them good candidates for the development of novel infrared devices.