scholarly journals Spin Relaxation of Conduction Electrons in Semiconductors Due to Interaction with Nuclear Spins

Nano Letters ◽  
2003 ◽  
Vol 3 (6) ◽  
pp. 695-700 ◽  
Author(s):  
Yuriy V. Pershin ◽  
Vladimir Privman
Keyword(s):  
Spin Relaxation ◽  
Nuclear Spins ◽  
Conduction Electrons

Spin Relaxation Time of Conduction Electrons in Bulk Sodium Metal

1971 ◽  
Vol 3 (2) ◽  
pp. 320-323 ◽  
Author(s):  
W. Kolbe
Keyword(s):  
Relaxation Time ◽  
Spin Relaxation ◽  
Spin Relaxation Time ◽  
Conduction Electrons ◽  
Sodium Metal

Spin relaxation of conduction electrons inn-type indium antimonide at low temperature

1975 ◽  
Vol 11 (4) ◽  
pp. 1555-1562 ◽  
Author(s):  
J. -N. Chazalviel
Keyword(s):  
Low Temperature ◽  
Spin Relaxation ◽  
Indium Antimonide ◽  
Conduction Electrons

Nuclear spins as probes for conduction electrons

2007 ◽  
pp. 113-131 ◽  
Author(s):  
Gert Denninger
Keyword(s):  
Nuclear Spins ◽  
Conduction Electrons

Spin relaxation of conduction electrons due to surface paramagnetic centers

1976 ◽  
Author(s):  
Adán R. Rodríquez ◽  
J. S. Helman
Keyword(s):  
Spin Relaxation ◽  
Paramagnetic Centers ◽  
Conduction Electrons

The Impurity Spin-Dependent Scattering Effects in the Transport and Spin Resonance of Conduction Electrons in Bismuth Doped Silicon

2015 ◽  
Vol 242 ◽  
pp. 327-331 ◽  
Author(s):  
Andrey V. Soukhorukov ◽  
Davud V. Guseinov ◽  
Alexei V. Kudrin ◽  
Sergey A. Popkov ◽  
Alexandra P. Detochenko ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Anomalous Hall Effect ◽  
Hall Resistance ◽  
Resonance Spectroscopy ◽  
Electron Spin Relaxation ◽  
Conduction Electrons ◽  
Spin Resonance ◽  
Hall Effect Measurements

Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013- 7.7·1015cm-3concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.

scholarly journals Quantum dynamics of nuclear spins and spin relaxation in organic semiconductors

2017 ◽  
Vol 95 (21) ◽  
Author(s):  
V. V. Mkhitaryan ◽  
V. V. Dobrovitski
Keyword(s):  
Organic Semiconductors ◽  
Spin Relaxation ◽  
Quantum Dynamics ◽  
Nuclear Spins

scholarly journals Nuclear spin relaxation by intramolecular interactions in gases of homonuclear diatomic molecules

1976 ◽  
Vol 54 (22) ◽  
pp. 2209-2212 ◽  
Author(s):  
Myer Bloom ◽  
Peter Beckmann ◽  
B. C. Sanctuary
Keyword(s):  
High Temperatures ◽  
Spin Relaxation ◽  
Nuclear Spin ◽  
Diatomic Molecules ◽  
Intramolecular Interactions ◽  
Spin Density Matrix ◽  
Nuclear Spin Relaxation ◽  
Nuclear Spins ◽  
Rotational States ◽  
Homonuclear Diatomic Molecules

The differential equations which describe the relaxation of macroscopic observables associated with nuclear spins in homonuclear diatomic molecules are derived using an expansion of the nuclear spin density matrix in terms of irreducible tensors. It is shown, using an intramolecular quadrupole mechanism, that the only difference between nuclear spin relaxation of the ortho- and para-species arises from the rotational states being restricted to odd and even values. This difference is vanishingly small at high temperatures so that the relaxation equations for nuclear magnetization become identical for both species. A previous paper predicting a difference even at high temperatures is shown to be in error and is corrected.

COPPER SITE NUCLEAR SPIN RELAXATION ANOMALY AND THE KNIGHT SHIFT

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3143-3147
Author(s):  
WEI GUO ◽  
LIKUN WANG ◽  
RUSHAN HAN
Keyword(s):  
Spin Relaxation ◽  
Nuclear Spin ◽  
Knight Shift ◽  
Component Model ◽  
Nuclear Spin Relaxation ◽  
Nuclear Spins ◽  
Local Electron ◽  
Copper Site ◽  
Two Component ◽  
Anomalous Relaxation

In the low doping limit, a high Tc cuprate preserves a two band structure. O2p electrons are itinerant, Cu3d electrons are localized. Therefore the two component model is suitable to describe nuclear spin relaxation at copper sites. In addition to the Korringa process, the hyperfine interaction between nuclear spins and local electron spins is considered, which gives rise to the anomalous relaxation rate 1/T1 = a + bT. The decrease of the susceptibility near Tc, as shown by the Knight shift measurements, can be attributed to the ordering of local spins and the pairing of the uncompensated spins created by holes at the oxygen sites.

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