Spin relaxation of conduction electrons due to surface paramagnetic centers

1976 ◽  
Author(s):  
Adán R. Rodríquez ◽  
J. S. Helman
Keyword(s):  
Spin Relaxation ◽  
Paramagnetic Centers ◽  
Conduction Electrons

Spin Relaxation Time of Conduction Electrons in Bulk Sodium Metal

1971 ◽  
Vol 3 (2) ◽  
pp. 320-323 ◽  
Author(s):  
W. Kolbe
Keyword(s):  
Relaxation Time ◽  
Spin Relaxation ◽  
Spin Relaxation Time ◽  
Conduction Electrons ◽  
Sodium Metal

ESR Of Graphite-Like Amorphous Carbon Thin Film In The 20 – 340 K Temperature Range

2006 ◽  
Vol 984 ◽  
Author(s):  
Gustavo A. Viana ◽  
Francisco C. Marques
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Ion Beam ◽  
Localized States ◽  
Paramagnetic Centers ◽  
Conduction Electrons ◽  
Temperature Range ◽  
Spin Resonance ◽  
Electron Energy Loss ◽  
Amorphous Carbon Thin Film

AbstractElectron spin resonance of graphite-like a-C thin films is investigated in the 20 K up to 340 K temperature range. The films with sp2 concentration of about 90 % (determined by electron energy loss spectroscopy), with no measurable optical band gap, were prepared by ion beam assisted sputtering. The results revealed an unexpected low density of paramagnetic centers, ascribed to itinerant states (conduction electrons) and not to localized states usually reported for a-C with band gap higher than 1.0 eV.

Spin relaxation of conduction electrons inn-type indium antimonide at low temperature

1975 ◽  
Vol 11 (4) ◽  
pp. 1555-1562 ◽  
Author(s):  
J. -N. Chazalviel
Keyword(s):  
Low Temperature ◽  
Spin Relaxation ◽  
Indium Antimonide ◽  
Conduction Electrons

scholarly journals Slow spin relaxation of paramagnetic centers in graphene oxide

Carbon ◽  
2019 ◽  
Vol 152 ◽  
pp. 98-105 ◽  
Author(s):  
Maria A. Augustyniak-Jabłokow ◽  
Krzysztof Tadyszak ◽  
Roman Strzelczyk ◽  
Ryhor Fedaruk ◽  
Raanan Carmieli
Keyword(s):  
Graphene Oxide ◽  
Spin Relaxation ◽  
Paramagnetic Centers

The Impurity Spin-Dependent Scattering Effects in the Transport and Spin Resonance of Conduction Electrons in Bismuth Doped Silicon

2015 ◽  
Vol 242 ◽  
pp. 327-331 ◽  
Author(s):  
Andrey V. Soukhorukov ◽  
Davud V. Guseinov ◽  
Alexei V. Kudrin ◽  
Sergey A. Popkov ◽  
Alexandra P. Detochenko ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Anomalous Hall Effect ◽  
Hall Resistance ◽  
Resonance Spectroscopy ◽  
Electron Spin Relaxation ◽  
Conduction Electrons ◽  
Spin Resonance ◽  
Hall Effect Measurements

Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013- 7.7·1015cm-3concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.

93. Impurity spin relaxation via the conduction electrons in silicon

Physica ◽  
1958 ◽  
Vol 24 ◽  
pp. S163 ◽  
Author(s):  
A. Honig
Keyword(s):  
Spin Relaxation ◽  
Conduction Electrons ◽  
Impurity Spin

Phonon-induced spin relaxation of conduction electrons in silicon crystals

2014 ◽  
Author(s):  
D. Persano Adorno ◽  
N. Pizzolato ◽  
C. Graceffa
Keyword(s):  
Spin Relaxation ◽  
Conduction Electrons ◽  
Silicon Crystals

scholarly journals Theory of the Spin Relaxation of Conduction Electrons in Silicon

2010 ◽  
Vol 104 (1) ◽  
Author(s):  
J. L. Cheng ◽  
M. W. Wu ◽  
J. Fabian
Keyword(s):  
Spin Relaxation ◽  
Conduction Electrons
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