Probing Spatially Dependent Photoinduced Charge Transfer Dynamics to TiO2 Nanoparticles Using Single Quantum Dot Modified Atomic Force Microscopy Tips

Nano Letters ◽  
2013 ◽  
Vol 13 (11) ◽  
pp. 5563-5569 ◽  
Author(s):  
Zheng Liu ◽  
Haiming Zhu ◽  
Nianhui Song ◽  
Tianquan Lian
Keyword(s):  
Atomic Force Microscopy ◽  
Charge Transfer ◽  
Quantum Dot ◽  
Single Quantum ◽  
Photoinduced Charge Transfer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Single Quantum Dot ◽  
Charge Transfer Dynamics ◽  
Photoinduced Charge

Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results

2014 ◽  
Vol 25 (19) ◽  
pp. 195201 ◽  
Author(s):  
Daniele Barettin ◽  
Roberta De Angelis ◽  
Paolo Prosposito ◽  
Matthias Auf der Maur ◽  
Mauro Casalboni ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Quantum Dot ◽  
Force Microscopy ◽  
Atomic Force ◽  
Inp Surface

Atomic Force Microscopy and Transmission Electron Microscopy Study of Self-Organized Ordering in Vertically Aligned PbSe Quantum Dot Superlattices

2001 ◽  
Vol 696 ◽  
Author(s):  
A. Raab ◽  
G. Springholz ◽  
R. T. Lechner ◽  
I. Vavra ◽  
H. H. Kang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Quantum Dot ◽  
Force Microscopy ◽  
Self Organized ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Ordering ◽  
Spacer Thickness

AbstractSelf-organized lateral ordering is studied for PbSe/Pb1-xEuxTe quantum dot superlattices as a function of spacer thickness using atomic force microscopy and transmission electron microscopy. It is found that a pronounced hexagonal lateral ordering tendency exist not only for fcc-stacked superlattices but also for those with vertical dot alignment. For the latter case, a best in-plane ordering is observed for Pb1-xEuxTe spacer thicknesses around 160 Å. This is accompanied by a pronounced narrowing of the size distribution to values as low as ±8%. The resulting in-plane dot separations and dot densities are tunable by changes in spacer thickness. Similar marked changes are also found for PbSe dot shape as well as the dot sizes. This provides additional means for the tuning of the optical and electronic properties of the dots.

Transient Hole Trapping in Individual GeSi Quantum Dot Grown on Si(001) Studied by Conductive Atomic Force Microscopy

2008 ◽  
Vol 25 (12) ◽  
pp. 4360-4363 ◽  
Author(s):  
Wu Rong ◽  
Lin Jian-Hui ◽  
Zhang Sheng-Li ◽  
Yang Hong-Bin ◽  
Jiang Zui-Min ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Quantum Dot ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Hole Trapping ◽  
Atomic Force
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