Zn diffusion technology for InP-InGaAs avalanche photodiodes

This paper presents a study of Zn diffusion process into InP and InGaAs/InP epitaxial heterostructures grown by molecular beam epitaxy. It was found that both diffusion systems: a resistively heated quartz reactor with a solid-state Zn vapor source placed inside and hydrogen or nitrogen as the carrier gas and MOCVD reactor with hydrogen as the carrier gas allow achieving similar dopant concentration above 2*10e18 cm-3. The depth of the diffusion front in the InP layer is located from 2 to 3.5 μm depending on the temperature and time of the diffusion process. The diffusion of Zn into InP through the intermediate InGaAs layer provides better surface quality comparing with direct zinc diffusion into InP surface.

Creation of thin films on the surface of InP with a controlled gas-sensitive signal under the influence of PbO + Y2O3 compositions

Thin-film objects with a reproducible temperature dependence of the resistance, thermally stable, and easy to obtain can be used as the sensitive elements in semiconductor gas sensors. The aim of this study was to create thin films on the InP surface under the influence of an oxide chemostimulator + inert component (PbO + Y2O3, respectively) compositions and to determine their gas-sensitive properties and their dependence on the formula of the composition.Thin films were synthesised on the InP surface by the method of chemically stimulated thermal oxidation under the influence of various PbO + Y2O3 compositions. The thickness of the formed films, their elemental and chemical composition were determined (by laser ellipsometry, X-ray phase analysis, and infra-red spectroscopy). A number of experiments were carried out to establish the gas-sensitive properties of the obtained films with respect to ammonia with concentrations of 120, 100, and 80 ppm.By chemically stimulated thermal oxidation, we obtained thin films with semiconductor properties on the InP surface. It was determined that the samples had n-type conductivity. A gas-sensitive response was detected in the presence of ammonia in the atmosphere. The ability to create thin films with a predetermined value of sensory response was demonstrated

Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions

An InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH3/H2O2 mixture were contacted under atmospheric conditions. Subsequently, the InP/diamond specimen was annealed at 250 °C to form direct bonding. The InP and diamond substrates formed atomic bonds with a shear strength of 9.3 MPa through an amorphous intermediate layer with a thickness of 3 nm. As advanced thermal management can be provided by typical surface cleaning processes followed by low-temperature annealing, the proposed bonding method would facilitate next-generation InP devices, such as transistors for high-frequency and high-power operations.

Low-temperature Direct Bonding of Inp and Diamond Substrates Under Atmospheric Conditions

An InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH3/H2O2 mixture were contacted under atmospheric conditions. Subsequently, the InP/diamond specimen was annealed at 250 °C to form direct bonding. The InP and diamond substrates formed atomic bonds with a shear strength of 9.3 MPa through an amorphous intermediate layer with a thickness of 3 nm. As advanced thermal management can be provided by typical surface cleaning processes followed by low-temperature annealing, the proposed bonding method would facilitate next-generation InP devices, such as transistors for high-frequency and high-power operations.

Фотодинамика переноса возбуждения носителями заряда в гибридной наносистеме InP/InAsP/InP

The results of processing the luminescence attenuation kinetics of an InP/InAsP/InP hybrid semiconductor nanostructure with deposited colloidal layers of CdSe/ZnS quantum dots (QD) under excitation at wavelengths of 532 and 633 nm and temperatures of 80 and 300 K. Such a nanostructure is characterized by a significant increase in the duration and intensity of the luminescence of the INASP nanostructure. The mechanism of increasing the luminescence duration is presumably associated with the interaction of the QD CdSe/ZnS-TORO colloid with the InP surface, which leads to the formation of new hybrid states in the band gap that are energetically close to the radiating state and are able to capture electrons, which in turn is compensated by the increasing role of the electron reverse transfer process, which leads to an increase in the duration of radiative recombination.

Effect of WET treatment on Group III-V Compound Semiconductor Surface

In this work, we investigated interfacial properties of InP, which is a typical group III-V compound used for semiconductors, by using a chemical-treated metal oxide semiconductor (MOS) capacitor. The interfacial properties of InP is more affected by interface state density than the surface roughness and is greatly affected by In2O3in particular. Additionally, we evaluated In2O3growth during 24-hour rinsing and air exposure and found that In2O3on an InP surface grows larger during rinsing than during air exposure. To reduce In2O3, the rinse needs to be optimized.