Diffusion bonding of zirconia to silicon nitride using nickel interlayers

1998 ◽  
Vol 33 (18) ◽  
pp. 4525-4530 ◽  
Author(s):  
R. H. VEGTER ◽  
R. H. VEGTER
Keyword(s):  
Silicon Nitride ◽  
Diffusion Bonding

scholarly journals Solid State Diffusion Bonding of Silicon Nitride Using Vanadium Foils

2003 ◽  
Vol 44 (12) ◽  
pp. 2701-2710 ◽  
Author(s):  
Masakatsu Maeda ◽  
Osamu Igarashi ◽  
Toshiya Shibayanagi ◽  
Masaaki Naka
Keyword(s):  
Silicon Nitride ◽  
Solid State ◽  
Diffusion Bonding ◽  
Solid State Diffusion ◽  
State Diffusion

Joining of Silicon Nitride to Metal (Mo and Ti) Using a Cu-Foil Interlayer

2006 ◽  
Vol 509 ◽  
pp. 99-104 ◽  
Author(s):  
José G. Flores ◽  
José Cervantes ◽  
José Lemus-Ruiz
Keyword(s):  
Silicon Nitride ◽  
Diffusion Bonding ◽  
The Other ◽  
Reaction Products ◽  
Interface Formation ◽  
High Affinity ◽  
Higher Temperature ◽  
Reactive Interface ◽  
Cu Foil ◽  
Foil Interlayer

This work focuses on various aspects of diffusion bonding silicon nitride to Mo and Ti using a Cu-foil interlayer. Si3N4/Cu/Ti/Cu/Si3N4 and Si3N4/Cu/Mo/Cu/Si3N4 combinations have been diffusion joined at temperatures ranging from 950 to 1150 °C using different holding times in Ar. The results show that Si3N4 could not be bonded to Mo at temperature lower than 1100 °C even for holding times of 60 minutes, however, successful joining is achieved at 1150 °C. On the other hand, successful joining is accomplished at 1050 and 1100 °C for a Si3N4/Cu/Ti/Cu/Si3N4 sample. In the Si3N4/Cu/Ti system, joining occurs by the formation of a reactive interface with several reaction products on the metal side of the joint. All the silicon nitride samples have joined to titanium with no several interfacial cracking and porosity at the interface. The results corresponding to the Si3N4/Cu/Mo system show that a higher temperature is required to join the materials compared with the Si3N4/Cu/Ti system, since the formation of liquid produced by the interaction of Cu with Ti and Si promotes bonding and the high affinity of Ti for Si results in rapid interface formation.

Diffusion bonding of silicon nitride to

1993 ◽  
Vol 24 (8) ◽  
pp. 1835-1843 ◽  
Author(s):  
B. T. J. Stoop ◽  
G. Den Ouden
Keyword(s):  
Silicon Nitride ◽  
Diffusion Bonding

scholarly journals Diffusion bonding of silicon nitride to titanium

2000 ◽  
Vol 99 (5) ◽  
pp. 200-205 ◽  
Author(s):  
J. Lemus ◽  
R.A.L. Drew
Keyword(s):  
Silicon Nitride ◽  
Diffusion Bonding

Diffusion Bonding of Silicon Nitride Using a Superplastic β-SiAlON Interlayer

2004 ◽  
Vol 84 (2) ◽  
pp. 471-73 ◽  
Author(s):  
Rong-Jun Xie ◽  
Mamoru Mitomo ◽  
Gou-Dong Zhan ◽  
Li-Ping Huang ◽  
Xi-Ren Fu
Keyword(s):  
Silicon Nitride ◽  
Diffusion Bonding

Silicon nitride-nickel joints through diffusion bonding

1997 ◽  
Vol 45 (12) ◽  
pp. 5087-5097 ◽  
Author(s):  
L. Esposito ◽  
A. Bellosi ◽  
G. Celotti
Keyword(s):  
Silicon Nitride ◽  
Diffusion Bonding ◽  
Through Diffusion

Solid-state diffusion bonding of silicon nitride using titanium foils

2003 ◽  
Vol 34 (8) ◽  
pp. 1647-1656 ◽  
Author(s):  
Masakatsu Maeda ◽  
Ryozo Oomoto ◽  
Toshiya Shibayanagi ◽  
Masaaki Naka
Keyword(s):  
Silicon Nitride ◽  
Solid State ◽  
Diffusion Bonding ◽  
Solid State Diffusion ◽  
State Diffusion ◽  
Titanium Foils
Sign in / Sign up

Export Citation Format

Share Document