Temperatures of individual ion species and heating due to charge exchange in the ionosphere of Venus

1990 ◽  
Vol 95 (A5) ◽  
pp. 6569 ◽  
Author(s):  
Jhoon Kim ◽  
Andrew F. Nagy ◽  
Thomas E. Cravens ◽  
Hiroyuki Shinagawa
Keyword(s):  
Charge Exchange ◽  
Individual Ion ◽  
Ion Species

scholarly journals Nachlieferung von Elektronen beim Entladungsaufbau in Wasserstoff und Sauerstoff für E/p von 60 bis 3000 Volt/cm Torr

1967 ◽  
Vol 22 (3) ◽  
pp. 347-354
Author(s):  
H. Schlumbohm
Keyword(s):  
Excited States ◽  
Charge Exchange ◽  
Electronic States ◽  
Single Electron ◽  
Secondary Electrons ◽  
Electron Collisions ◽  
Positive Ions ◽  
Additional Process ◽  
Electron Avalanches ◽  
Ion Species

By analysing the temporal current shapes of electron avalanches the different secondary ionisation processes occuring in H2- and O2-discharges have been separated and data taken. In hydrogen at E/p < 250 volts/cm Torr secondary electrons are released at the cathode by photons emitted mainly from excited states of the WERNER-bands of the H2-molecule. In oxygen secondary electrons are released both within the gas and at the cathode at E/p < 500 volts/cm Torr by photons from electronic states above the first ionisation level of the O2-molecule, which are excited by single electron collisions.With increasing E/p additional secondary electrons in hydrogen are produced by positive ions at the cathode, but for E/p > 170 volts/cm Torr the avalanche currents cannot be interpreted by the photon and ion processes thus indicating the action of a third mechanism. The same result was obtained for oxygen at E/p > several 100 volts/cm Torr. This additional process is discussed on the basis of different ion species and a possible action of fast neutral molecules resulting from charge exchange collisions.

Uptake of cadmium and zinc by the algaChlorella vulgaris: Part 1. Individual ion species

1989 ◽  
Vol 34 (7) ◽  
pp. 990-999 ◽  
Author(s):  
Y. P. Ting ◽  
F. Lawson ◽  
I. G. Prince
Keyword(s):  
Individual Ion ◽  
Ion Species

First H+ Charge-Exchange Images in the Stim.

1976 ◽  
Vol 34 ◽  
pp. 504-505
Author(s):  
Wm. H. Escovitz ◽  
T. R. Fox ◽  
R. Levi-Setti
Keyword(s):  
Charge Exchange ◽  
Neutral Component ◽  
Channel Electron Multiplier ◽  
Electron Multiplier ◽  
Neutral Particles ◽  
Charged Beam ◽  
Scanning Transmission ◽  
Contrast Mechanism ◽  
Ion Microscopy ◽  
Beam Component

Charge exchange, the neutralization of ions by electron capture as the ions traverse matter, is a well-known phenomenon of atomic physics which is relevant to ion microscopy. In conventional transmission ion microscopes, the neutral component of the beam after it emerges from the specimen cannot be focused. The scanning transmission ion microscope (STIM) enables the detection of this signal to make images. Experiments with a low-resolution 55 kV STIM indicate that the charge-exchange signal provides a new contrast mechanism to detect extremely small amounts of matter. In an early version of charge-exchange detection (fig. 1), a permanent magnet installed between the specimen and the detector (a channel electron multiplier) sweeps the charged beam component away from the detector and allows only the neutrals to reach it. When the magnet is removed, both charged and neutral particles reach the detector.

SPECTRUM OF CHARGE EXCHANGE NEUTRALS FROM ROTATING PLASMA

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-503-C7-504
Author(s):  
M. P. Ryutova
Keyword(s):  
Charge Exchange

PHOTONS SHEDDING LIGHT UPON CHARGE EXCHANGE PROCESSES IN COLLISIONS OF 24 keV O3+ WITH ATOMIC HYDROGEN

1989 ◽  
Vol 50 (C1) ◽  
pp. C1-349-C1-352
Author(s):  
R. HOEKSTRA ◽  
K. BOORSMA ◽  
F. J . de HEER ◽  
R. MORGENSTERN
Keyword(s):  
Charge Exchange ◽  
Atomic Hydrogen ◽  
Exchange Processes

CONTRIBUTIONS FROM ION-ATOM CHARGE EXCHANGE COLLISIONS TO THE CVI LYMAN INTENSITIES IN THE JET TOKAMAK

1989 ◽  
Vol 50 (C1) ◽  
pp. C1-329-C1-335
Author(s):  
M. MATTIOLI ◽  
N. J. PEACOCK ◽  
H. P. SUMMERS ◽  
B. DENNE ◽  
N. C. HAWKES
Keyword(s):  
Charge Exchange

Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation

2002 ◽  
Vol 716 ◽  
Author(s):  
Alok Nandini ◽  
U. Roy ◽  
A. Mallikarjunan ◽  
A. Kumar ◽  
J. Fortin ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Ion Implantation ◽  
Dielectric Materials ◽  
Dramatic Improvement ◽  
Force Microscopy ◽  
Low Dielectric ◽  
Quantitative Measurements ◽  
Hardness Increase ◽  
Xerogel Films ◽  
Ion Species

AbstractThin films of low dielectric constant (κ) materials such as Xerogel (ĸ=1.76) and SilkTM (ĸ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm -2 and 1 x 1016 cm -2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low ĸ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5x hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

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