Effect of irradiation ion species on internal stress in boron thin films

1997 ◽  
Vol 241-243 (1) ◽  
pp. 1138-1141 ◽  
Author(s):  
N Satomi
1997 ◽  
Vol 241-243 ◽  
pp. 1138-1141 ◽  
Author(s):  
N. Satomi ◽  
K. Tanak ◽  
M. Kitamura ◽  
M. Nishikawa

1994 ◽  
Vol 343 ◽  
Author(s):  
Hideo Miura ◽  
Asao Nishimura

ABSTRACTInternal stress change of phosphorus-doped silicon thin films during crystallization is measured by detecting substrate curvature change using a scanning laser microscope. The films are deposited in an amorphous phase by chemical vapor deposition using Si2H6 gas. The deposited films have compressive stress of about 200 MPa. The internal stress changes significantly to a tensile stress of about 800 MPa at about 600 °C due to shrinkage of the films during crystallization. The high tensile stress can be relaxed by annealing above 800 °C. The phosphorus doping changes the crystallization process of the films and their final residual stress.


2022 ◽  
Author(s):  
Yuxi Ma ◽  
Quan Zhou ◽  
Jason D. Nicholas

The temperature dependence of a Mixed Ionic Electronic Conducting (MIEC) material’s thermo-chemical expansion coefficient, biaxial modulus, and/or Young’s modulus are crucial in determining the internal stress, strain, and/or mechanical stability...


2004 ◽  
Vol 95 (1) ◽  
pp. 219-225 ◽  
Author(s):  
Jung-Kun Lee ◽  
Young Hyun Lee ◽  
Kug Sun Hong ◽  
Jin-Wook Jang

2010 ◽  
Vol 74 (9) ◽  
pp. 610-613 ◽  
Author(s):  
Yoshiaki Shinohara ◽  
Koji Makita ◽  
Yoshihito Matsumura

2016 ◽  
Vol 308 ◽  
pp. 98-100 ◽  
Author(s):  
Sheida Shiri ◽  
Parisa Ashtijoo ◽  
Akindele Odeshi ◽  
Qiaoqin Yang
Keyword(s):  

1997 ◽  
Vol 33 (1-2) ◽  
pp. 31-36 ◽  
Author(s):  
R. Nowak ◽  
Y. Miyagawa ◽  
C.L. Li ◽  
S. Nakao ◽  
S. Maruno ◽  
...  

2011 ◽  
Vol 60 (8) ◽  
pp. 735-741
Author(s):  
Hiromi UENO ◽  
Keisuke TANAKA ◽  
Hirohisa KIMACHI ◽  
Daisuke SHIMADA

Author(s):  
Hideo MIURA ◽  
Norio ISHITSUKA ◽  
Naoto SAITO ◽  
Hiroyuki OHTA ◽  
Chiemi HASHIMOTO ◽  
...  

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