Author Correction: Different types of spin currents in the comprehensive materials database of nonmagnetic spin Hall effect

AbstractSpin Hall effect (SHE) has its special position in spintronics. To gain new insight into SHE and to identify materials with substantial spin Hall conductivity (SHC), we performed high-precision high-throughput ab initio calculations of the intrinsic SHC for over 20,000 nonmagnetic crystals. The calculations revealed a strong relationship between the magnitude of the SHC and the crystalline symmetry, where a large SHC is typically associated with mirror symmetry-protected nodal line band structures. This database includes 11 materials with an SHC comparable to or even larger than that of Pt. Materials with different types of spin currents were additionally identified. Furthermore, we found that different types of spin current can be obtained by rotating applied electrical fields. This improves our understanding and is expected to facilitate the design of new types of spin-orbitronic devices.

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Anomalous spin Hall and inverse spin Hall effects in magnetic systems

Communications Physics ◽

10.1038/s42005-021-00557-9 ◽

2021 ◽

Vol 4 (1) ◽

Author(s):

X. R. Wang

Keyword(s):

Hall Effect ◽

Order Parameter ◽

Spin Current ◽

Spin Hall Effect ◽

Magnetic Systems ◽

Charge Current ◽

Spin Currents ◽

Tensor Quantity ◽

Hall Effects ◽

Spin Hall Effects

AbstractSpin current is a very important tensor quantity in spintronics. However, the well-known spin-Hall effect (SHE) can only generate a few of its components whose propagating and polarization directions are perpendicular with each other and to an applied charge current. It is highly desirable in applications to generate spin currents whose polarization can be in any possible direction. Here anomalous SHE and inverse spin-Hall effect (ISHE) in magnetic systems are predicted. Spin currents, whose polarisation and propagation are collinear or orthogonal with each other and along or perpendicular to the charge current, can be generated, depending on whether the applied charge current is along or perpendicular to the order parameter. In anomalous ISHEs, charge currents proportional to the order parameter can be along or perpendicular to the propagating or polarization directions of the spin current.

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Enhancement of perpendicular magnetic anisotropy and transmission of spin-Hall-effect-induced spin currents by a Hf spacer layer in W/Hf/CoFeB/MgO layer structures

Applied Physics Letters ◽

10.1063/1.4866965 ◽

2014 ◽

Vol 104 (8) ◽

pp. 082407 ◽

Cited By ~ 145

Author(s):

Chi-Feng Pai ◽

Minh-Hai Nguyen ◽

Carina Belvin ◽

Luis Henrique Vilela-Leão ◽

D. C. Ralph ◽

...

Keyword(s):

Magnetic Anisotropy ◽

Hall Effect ◽

Perpendicular Magnetic Anisotropy ◽

Spin Hall Effect ◽

Spin Currents ◽

Layer Structures ◽

Spacer Layer

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Generating Spin Currents in Semiconductors with the Spin Hall Effect

Physical Review Letters ◽

10.1103/physrevlett.97.096605 ◽

2006 ◽

Vol 97 (9) ◽

Cited By ~ 111

Author(s):

V. Sih ◽

W. H. Lau ◽

R. C. Myers ◽

V. R. Horowitz ◽

A. C. Gossard ◽

...

Keyword(s):

Hall Effect ◽

Spin Hall Effect ◽

Spin Currents

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NONLOCAL ELECTRONIC SPIN DETECTION, SPIN ACCUMULATION AND THE SPIN HALL EFFECT

International Journal of Modern Physics B ◽

10.1142/s021797920905290x ◽

2009 ◽

Vol 23 (11) ◽

pp. 2413-2438 ◽

Cited By ~ 43

Author(s):

SERGIO O. VALENZUELA

Keyword(s):

Hall Effect ◽

Spin Diffusion ◽

Spin Injection ◽

Spin Hall Effect ◽

Current Status ◽

Pure Spin ◽

Spin Accumulation ◽

Spin Currents ◽

Electrical Spin ◽

Spin Detection

In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the induced spin accumulation or associated spin currents are detected by means of a second ferromagnet or the reciprocal spin Hall effect, respectively. This article reviews the current status of this subject, describing both recent progress and well-established results. The emphasis is on experimental techniques and accomplishments that brought about important advances in spin phenomena and possible technological applications. These advances include, amongst others, the characterization of spin diffusion and precession in a variety of materials, such as metals, semiconductors and graphene, the determination of the spin polarization of tunneling electrons as a function of the bias voltage, and the implementation of magnetization reversal in nanoscale ferromagnetic particles with pure spin currents.

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Prediction of tunable quantum spin Hall effect in methyl-functionalized tin film

Journal of Materials Chemistry C ◽

10.1039/c7tc00153c ◽

2017 ◽

Vol 5 (10) ◽

pp. 2656-2661 ◽

Cited By ~ 14

Author(s):

Hui Zhao ◽

Wei-xiao Ji ◽

Chang-wen Zhang ◽

Ping Li ◽

Shu-feng Zhang ◽

...

Keyword(s):

Hall Effect ◽

Quantum Spin ◽

Spin Hall Effect ◽

Quantum Spin Hall Effect ◽

Device Development ◽

Spin Currents ◽

Tin Film ◽

Quantum Spin Hall

The quantum spin Hall (QSH) effect may promote revolutionary device development due to dissipationless propagation of spin currents.

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SPIN HALL EFFECT

International Journal of Modern Physics B ◽

10.1142/s0217979209061986 ◽

2009 ◽

Vol 23 (12n13) ◽

pp. 2556-2565 ◽

Cited By ~ 7

Author(s):

M. I. DYAKONOV

Keyword(s):

Hall Effect ◽

Spin Transport ◽

Orbit Interaction ◽

Spin Hall Effect ◽

Spin Orbit ◽

Physical Origin ◽

Spin Orbit Interaction ◽

Spin Currents ◽

Spin Dependent Scattering

A review of the phenomenology of the Spin Hall Effect and related phenomena originating from the coupling between spin and charge currents by spin-orbit interaction is presented. The physical origin of various effects in spin-dependent scattering is demonstrated. A previously unknown feature of spin transport, the swapping of spin currents, is discussed.

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