inverse spin hall effect
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2021 ◽  
Vol 13 (4) ◽  
pp. 479-486
Author(s):  
Gennady A. Ovsyannikov ◽  
◽  
Karen Y. Constantinian ◽  
Vladislav A. Shmakov ◽  
Anton V. Shadrin ◽  
...  

Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences The paper presents the results of fabrication and structural study of SrIrO3/La0.7Sr0.3MnO3 heterostructures. The results of experimental studies of the spin current arising in the regime of ferromagnetic resonance are presented. The spin-orbit interaction present in 5d-oxides of transition metals, which is SrIrO3, provides an effective conversion of spin current to charge current due to the inverse spin Hall effect. The angular dependence of spin magnetoresistance makes it possible to determine the angle of the spin Hall effect.


2D Materials ◽  
2021 ◽  
Author(s):  
C.K. Safeer ◽  
Franz Herling ◽  
Won Young Choi ◽  
Nerea Ontoso ◽  
Josep Ingla-Aynés ◽  
...  

Abstract Understanding spin physics in graphene is crucial for developing future two- dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect can be achieved in graphene by proximity with an adjacent spin-orbit coupling material. Lateral spin valve devices, made up of a graphene Hall bar and ferromagnets, are best suited for such studies. Here, we report that signals mimicking the inverse Rashba-Edelstein effect can be measured in pristine graphene possessing negligible spin-orbit coupling, confirming that these signals are unrelated to spin-to-charge conversion. We identify either the anomalous Hall effect in the ferromagnet or the ordinary Hall effect in graphene induced by stray fields as the possible sources of this artefact. By quantitatively comparing these options with finite-element-method simulations, we conclude the latter better explains our results. Our study deepens the understanding of spin-to-charge conversion measurement schemes in graphene, which should be taken into account when designing future experiments.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Ryo Ohshima ◽  
Yuto Kohsaka ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
Masashi Shiraishi

AbstractThe spin Hall effect (SHE) and inverse spin Hall effect (ISHE) have played central roles in modern condensed matter physics especially in spintronics and spin-orbitronics, and much effort has been paid to fundamental and application-oriented research towards the discovery of novel spin–orbit physics and the creation of novel spintronic devices. However, studies on gate-tunability of such spintronics devices have been limited, because most of them are made of metallic materials, where the high bulk carrier densities hinder the tuning of physical properties by gating. Here, we show an experimental demonstration of the gate-tunable spin–orbit torque in Pt/Ni80Fe20 (Py) devices by controlling the SHE using nanometer-thick Pt with low carrier densities and ionic gating. The Gilbert damping parameter of Py and the spin-memory loss at the Pt/Py interface were modulated by ionic gating to Pt, which are compelling results for the successful tuning of spin–orbit interaction in Pt.


2021 ◽  
Author(s):  
Ryo Ohshima ◽  
Yuto Kohsaka ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
Masashi Shiraishi

Abstract The spin Hall effect (SHE) and inverse spin Hall effect (ISHE) have played central roles in modern condensed matter physics especially in spintronics and spin-orbitronics, and much effort has been paid to fundamental and application-oriented research towards the discovery of novel spin-orbit physics and the creation of novel spintronic devices. However, studies on gate-tunability of such spintronics devices have been limited, because most of them are made of metallic materials, where the high bulk carrier densities hinder the tuning of physical properties by gating. Here, we show an experimental demonstration of the gate-tunable spin-orbit torque in Pt/Ni80Fe20 (Py) devices by controlling the SHE using nanometer-thick Pt with low carrier densities and ionic gating. The Gilbert damping parameter of Py and the spin-memory loss at the Pt/Py interface were modulated by ionic gating to Pt, which are compelling results for the successful tuning of spin-orbit interaction in Pt.


Author(s):  
Koustuv Roy ◽  
Abhisek Mishra ◽  
Pushpendra Gupta ◽  
Shaktiranjan Mohanty ◽  
Braj Bhusan Singh ◽  
...  

2021 ◽  
pp. 2000146
Author(s):  
Biswajit Sahoo ◽  
Koustuv Roy ◽  
Pushpendra Gupta ◽  
Abhisek Mishra ◽  
Biswarup Satpati ◽  
...  

2021 ◽  
Vol 118 (24) ◽  
pp. 242402
Author(s):  
Michael Balinskiy ◽  
Howard Chiang ◽  
David Gutierrez ◽  
Alexander Khitun

2021 ◽  
Vol 103 (21) ◽  
Author(s):  
A. Yagmur ◽  
S. Sumi ◽  
H. Awano ◽  
K. Tanabe

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