Abstract
Deeplearning algorithms are revolutionising many aspects of modern life. Typically, they are implemented in CMOS-based hardware with severely limited memory access times and inefficient data-routing. All-optical neural networks without any electro-optic conversions could alleviate these shortcomings. However, an all-optical nonlinear activation function, which is a vital building block for optical neural networks, needs to be developed efficiently on-chip. Here, we introduce and demonstrate both optical synapse weighting and all-optical nonlinear thresholding using two different effects in one single chalcogenide material. We show how the structural phase transitions in a wide-bandgap phase-change material enables storing the neural network weights via non-volatile photonic memory, whilst resonant bond destabilisation is used as a nonlinear activation threshold without changing the material. These two different transitions within chalcogenides enable programmable neural networks with near-zero static power consumption once trained, in addition to picosecond delays performing inference tasks not limited by wire charging that limit electrical circuits; for instance, we show that nanosecond-order weight programming and near-instantaneous weight updates enable accurate inference tasks within 20 picoseconds in a 3-layer all-optical neural network. Optical neural networks that bypass electro-optic conversion altogether hold promise for network-edge machine learning applications where decision-making in real-time are critical, such as for autonomous vehicles or navigation systems such as signal pre-processing of LIDAR systems.
On-chip electro-optic frequency shifters and beam splitters