scholarly journals On-chip electro-optic tuning of a lithium niobate microresonator with integrated in-plane microelectrodes

2017 ◽  
Vol 25 (1) ◽  
pp. 124 ◽  
Author(s):  
Min Wang ◽  
Yingxin Xu ◽  
Zhiwei Fang ◽  
Yang Liao ◽  
Peng Wang ◽  
...  
Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 298
Author(s):  
Yannick Minet ◽  
Hans Zappe ◽  
Ingo Breunig ◽  
Karsten Buse

Whispering gallery resonators made out of lithium niobate allow for optical parametric oscillation and frequency comb generation employing the outstanding second-order nonlinear-optical properties of this material. An important knob to tune and control these processes is, e.g., the linear electro-optic effect, the Pockels effect via externally applied electric fields. Due to the shape of the resonators a precise prediction of the electric field strength that affects the optical mode is non-trivial. Here, we study the average strength of the electric field in z-direction in the region of the optical mode for different configurations and geometries of lithium niobate whispering gallery resonators with the help of the finite element method. We find that in some configurations almost 100% is present in the cavity compared to the ideal case of a cylindrical resonator. Even in the case of a few-mode resonator with a very thin rim we find a strength of 90%. Our results give useful design considerations for future arrangements that may benefit from the strong electro-optic effect in bulk whispering gallery resonators made out of lithium niobate.


2021 ◽  
Vol 51 (3) ◽  
pp. 738-745
Author(s):  
Minakshi Mandal ◽  
Rupali Maji ◽  
Sourangshu Mukhopadhyay

Photonics ◽  
2021 ◽  
Vol 8 (7) ◽  
pp. 242
Author(s):  
An-Chung Chiang ◽  
Yuan-Yao Lin ◽  
Shou-Tai Lin ◽  
Yen-Yin Lin

Electro-optic (EO) Bragg deflectors have been extensively used in a variety of applications. Recent developments show that bandwidths and deflection efficiencies, as well as angular bandwidths, would significantly limit the utilization of EO Bragg deflectors, especially for applications which need strong focusing, such as intra-cavity applications. In this paper, we introduce a broadband EO Bragg deflector based on periodically-poled lithium niobate with a monolithic dual-grating design. We analyzed the deflection properties of this device by using a modified coupled wave theory and showed that this device can be still efficient for a small beam radius under strong focusing, whereas a single-grating one becomes very inefficient. Using a 1064-nm laser beam with a 100-μm beam radius, we obtained a 74% deflection efficiency with a 190-V bias voltage with a 0.5-mm-thick and 7.5-mm-long dual-grating sample. The acceptance angle for the Bragg condition of this device is as large as a few tens of mrad. The potential bandwidth of this device exceeds 500 nm if the proper operation region is chosen.


Nature ◽  
2019 ◽  
Vol 568 (7752) ◽  
pp. 373-377 ◽  
Author(s):  
Mian Zhang ◽  
Brandon Buscaino ◽  
Cheng Wang ◽  
Amirhassan Shams-Ansari ◽  
Christian Reimer ◽  
...  

2002 ◽  
Vol 743 ◽  
Author(s):  
W. Alan Doolittle ◽  
Gon Namkoong ◽  
Alexander Carver ◽  
Walter Henderson ◽  
Dieter Jundt ◽  
...  

ABSTRACTHerein, we discuss the use of a novel new substrate for III-Nitride epitaxy, Lithium Niobate. It is shown that Lithium Niobate (LN) has a smaller lattice mismatch to III-Nitrides than sapphire and can be used to control the polarity of III-Nitride films grown by plasma assisted molecular beam epitaxy. Results from initial growth studies are reported including using various nitridation/buffer conditions along with structural and optical characterization. Comparisons of data obtained from GaN and AlN buffer layers are offered and details of the film adhesion dependence on buffer layer conditions is presented. Lateral polarization heterostructures grown on periodically poled LN are also demonstrated. While work is still required to establish the limits of the methods proposed herein, these initial studies offer the promise for mixing III-Nitride semiconductor materials with lithium niobate allowing wide bandgap semiconductors to utilize the acoustic, pyroelectric/ferroelectric, electro-optic, and nonlinear optical properties of this new substrate material as well as the ability to engineer various polarization structures for future devices.


2021 ◽  
Author(s):  
Xuecheng Liu ◽  
Bing Xiong ◽  
Changzheng Sun ◽  
Jian Wang ◽  
Zhibiao Hao ◽  
...  

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