Integrated Photonic Circuits in Gallium Nitride and Aluminum Nitride

2014 ◽  
Vol 23 (01n02) ◽  
pp. 1450001 ◽  
Author(s):  
Chi Xiong ◽  
Wolfram Pernice ◽  
Carsten Schuck ◽  
Hong X. Tang
Keyword(s):  
High Speed ◽  
Optical Signal ◽  
Silicon Substrates ◽  
Material System ◽  
Group Iii ◽  
Electro Optic ◽  
New Material ◽  
Nanophotonic Circuits ◽  
Group Iii Nitride ◽  
On Chip

Integrated optics is a promising optical platform both for its enabling role in optical interconnects and applications in on-chip optical signal processing. In this paper, we discuss the use of group III-nitride (GaN, AlN) as a new material system for integrated photonics compatible with silicon substrates. Exploiting their inherent second-order nonlinearity we demonstrate and second, third harmonic generation in GaN nanophotonic circuits and high-speed electro-optic modulation in AlN nanophotonic circuits.

Recent Progress of Electro-optic Polymers for Device Applications

1997 ◽  
Vol 488 ◽  
Author(s):  
Alex K-Y. Jen ◽  
Qing Yang ◽  
Seth R. Marder ◽  
Larry R. Dalton ◽  
Ching-Fong Shu
Keyword(s):  
Data Storage ◽  
High Speed ◽  
Stable State ◽  
Optical Data Storage ◽  
Device Fabrication ◽  
Optical Data ◽  
Material System ◽  
Electro Optic ◽  
Potential Applications ◽  
Device Applications

AbstractElectro-optic (E-O) polymers have drawn great interest in recent years because of their potential applications in photonics devices such as high speed modulators and switches, optical data storage and information processing1–2. In order to have suitable materials for device fabrication, it is essential to design and develop polymeric material systems (active and passive polymers) with matched refractive indices, large E-O coefficients, good temporal and photochemical stability3–8 The E-O response of an active polymer commonly arises from the electric field induced alignment of its second-order nonlinear optical (NLO) chromophore, either doped as a guest/host system or covalently bonded as a side-chain. Because of the strong interaction among the electric dipoles, the poled structure is in a meta-stable state; the poled NLO chromophores which possess large dipole moment will tend to relax back to the randomly oriented state. As a result, the stability of the poled structure strongly depends on the rigidity of the overall material system. As it might be expected, the continuous increases of the rigidity and Tg of poled polymers imposes constraints on the selection of suitable chromophores that can survive the hightemperature poling and processing conditions. To circumvent this problem, we have developed a series of chromophores that possess conformation-locked geometry and perfluoro-dicyanovinylsubstituted electron-accepting group which demonstrate both good thermal stabilty and nonlinearity. This paper provides a brief review of these highly efficient and thermally stable chromophores and polymers for device applications.

High-speed 4x4 optoelectronic switch with on-chip optical signal distribution

1998 ◽  
Author(s):  
Carlos Almeida ◽  
Francois L. Gouin ◽  
Lucie Robitaille ◽  
Claire L. Callender ◽  
Julian P. Noad
Keyword(s):  
High Speed ◽  
Optical Signal ◽  
Signal Distribution ◽  
On Chip ◽  
Optoelectronic Switch

Renaissance and Progress in Nitride Semiconductors - My Personal History of Nitride Research -

2000 ◽  
Vol 639 ◽  
Author(s):  
Isamu Akasaki
Keyword(s):  
High Speed ◽  
High Performance ◽  
Green Light ◽  
Blue Laser ◽  
Personal History ◽  
Nitride Semiconductors ◽  
Quarter Century ◽  
Group Iii ◽  
History Of ◽  
Group Iii Nitride

ABSTRACTWide bandgap group-III nitride semiconductors are currently experiencing the most exciting development. High brightness blue and green light emitting diodes (LEDs) are commercialized, and UV and blue laser diodes (LDs), high-speed transistors (TRs) and UV photodetectors (PDs) with low dark current, which will be able to operate in harsh environments, have been demonstrated. In this paper, renaissance and progress in crystal growth and conductivity control of nitride semiconductors in the last quarter century are reviewed as the groundwork for all of those high-performance devices. My personal history of nitride research will be also introduced.

High-Speed Efficient On-Chip Electro-Optic Modulator Based on Midinfrared Hyperbolic Metamaterials

2021 ◽  
Vol 16 (3) ◽  
Author(s):  
Dongdong Li ◽  
Hongbin Ma ◽  
Qiwei Zhan ◽  
Jie Liao ◽  
Wen-Yan Yin ◽  
...  
Keyword(s):  
High Speed ◽  
Hyperbolic Metamaterials ◽  
Electro Optic ◽  
On Chip ◽  
Electro Optic Modulator

Properties of InN grown by High-Pressure CVD

2005 ◽  
Vol 892 ◽  
Author(s):  
Mustafa Alevli ◽  
Goksel Durkaya ◽  
Vincent Woods ◽  
Ute Habeck ◽  
Hun Kang ◽  
...  
Keyword(s):  
High Pressure ◽  
Real Time ◽  
High Speed ◽  
Growth Process ◽  
Optical Characterization ◽  
Optoelectronic Device ◽  
Process Conditions ◽  
Major Step ◽  
Group Iii ◽  
Group Iii Nitride

AbstractGroup III-nitride compound semiconductors (e.g. AlN-GaN-InN) have generated considerable interest for use in advanced optoelectronic device structures. The fabrication of multi-tandem solar cells, high-speed optoelectronics and solid state lasers operating at higher energy wavelengths will be made possible using (Ga1-y-xAlyInx)N heterostructures due to their robustness against radiation and the wide spectral application range. To date, the growth of indium rich (In1-xGax)N films and heterostructures remains a challenge, primarily due to the large thermal decomposition pressures in indium rich group III-nitride alloys at the optimum growth temperatures. In order to control the partial pressures during the growth process of InN and related alloys, a unique high-pressure chemical vapor deposition (HPCVD) system with integrated real-time optical monitoring capabilities has been developed. We report initial results on InN layers grown at temperatures as high as ∼850°C with reactor pressures around 15 bar. Such process conditions are a major step towards the fabrication of indium rich group III-nitride heterostructures that are embedded in wide band gap group III-nitrides. Real-time optical characterization techniques are applied in order to study the gas phase kinetics and surface chemistry processes during the growth process.For an ammonia to TMI precursor flow ratio below 500, multiple phases with sharp XRD features are observed. Structural analysis perform by Raman scattering techniques indicates that the E2 high mode improves as NH3:TMI ratio is decreased to below 500. Optical characterization of these InN layers indicates that the absorption edge shifts from down from 1.85 eV to 0.7 eV. This shift seems to be caused by a series of localized absorption centers that appear as the indium to nitrogen stoichiometry varies. This contribution will correlate the process parameters to results obtained by XRD, Raman spectroscopy and optical spectroscopy, in order to assess the InN film properties.

scholarly journals Design of Electro-optic Mach-zehnder Interferometer Based All-optical Binary Half Adder and Half Subtractor

2021 ◽  
Author(s):  
sehajpal kaur ◽  
Maninder Lal Singh ◽  
Priyanka . ◽  
Mandeep Singh
Keyword(s):  
Signal Processing ◽  
High Speed ◽  
Optical Switching ◽  
Optical Signal ◽  
Zehnder Interferometer ◽  
Switching Network ◽  
Electro Optic ◽  
Half Adder ◽  
All Optical ◽  
Mach Zehnder Interferometer

Abstract By exploiting the phenomena of optical switching, different logic functions for all-optical digital signal processing has been projected. This paper presents the application of optical switching to design of all-optical half adder and half subtractor by Mach-Zehnder interferometer. All-Optical half adder and half subtractor are designed with the optimized structure of 2 × 2 Mach-Zehnder interferometer switch by electro-optic effect in lithium niobate. Numerical simulations of the proposed structure have been conducted to verify the suitability of the designed structure using Opti-BPM software. The implementation of proposed structures is simulated in MATLAB software along with the mathematical description. It is interesting to analyze that the proposed structures are useful to generate combinational and sequential logic circuits in high-speed optical signal processing and switching network.

scholarly journals Properties of InN layers grown by High Pressure CVD

2006 ◽  
Vol 955 ◽  
Author(s):  
Mustafa Alevli ◽  
Goksel Durkaya ◽  
Ronny Kirste ◽  
Aruna Weesekara ◽  
Unil Perera ◽  
...  
Keyword(s):  
High Pressure ◽  
High Speed ◽  
Growth Parameters ◽  
Free Carrier ◽  
Dielectric Constants ◽  
High Quality ◽  
Group Iii ◽  
High Efficient ◽  
Nitride Alloys ◽  
Group Iii Nitride

ABSTRACTIndium nitride (InN) and indium-rich group III-nitride alloys are promising materials for advanced optoelectronic device applications. Indium-rich alloys, e.g. (Ga1-y-xAlyInx)N will enable the fabrication of high-efficient light emitting diodes tunable in the whole visible spectral region, as well as advanced high speed optoelectronics for optical communication operating. The present limitation in this area is the growth of high quality InN and indium-rich group III-nitride alloys as documented in many controversial reports on the true physical properties of InN. The difficulties arise from the low dissociation temperature of InN that requires an extraordinarily high nitrogen overpressure to stabilize the material up to optimum growth temperatures. We developed a novel “high-pressure chemical vapor deposition” (HPCVD) system, capable to control and analyze the vast different partial pressures of the constituents. Our results show that the chosen HPCVD pathway leads to high-quality single crystalline InN, demonstrating that HPCVD is a viable tool for the growth of indium rich group III nitride alloys. The structural analysis of InN deposited on GaN-sapphire substrate by XRD show single phase InN(0002) peaks with full width half maximum (FWHM) around 400 arcsec. Infrared reflectance spectroscopy is used to analyze the plasmon frequencies, high frequency dielectric constants, the free carrier concentrations and carrier mobilities in these layers. For nominal undoped InN layers, free carrier concentrations in the mid 1019 cm−3 and mobilities around 600 cm−2-V-1-s-1 are observed. Further improvements are expected as the growth parameters are optimized. The explored growth parameters are close to of those employed for GaN growth conditions, which is a major step towards the fabrication of indium rich (Ga1−y−xAlyInx)N alloys and heterostructures.

scholarly journals On-chip silicon photonic controllable 2 × 2 four-mode waveguide switch

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Cao Dung Truong ◽  
Duy Nguyen Thi Hang ◽  
Hengky Chandrahalim ◽  
Minh Tuan Trinh
Keyword(s):  
High Speed ◽  
Optical Switch ◽  
Optical Signal ◽  
Phase Shifters ◽  
Silicon On Insulator ◽  
Mode Division Multiplexing ◽  
Large Width ◽  
On Chip ◽  
Simultaneous Switching ◽  
20 Nm

AbstractMultimode optical switch is a key component of mode division multiplexing in modern high-speed optical signal processing. In this paper, we introduce for the first time a novel 2 × 2 multimode switch design and demonstrate in the proof-of-concept. The device composes of four Y-multijunctions and 2 × 2 multimode interference coupler using silicon-on-insulator material with four controllable phase shifters. The shifters operate using thermo-optic effects utilizing Ti heaters enabling simultaneous switching of the optical signal between the output ports on four quasi-transverse electric modes with the electric power consumption is in order of 22.5 mW and the switching time is 5.4 µs. The multimode switch exhibits a low insertion loss and a low crosstalk below − 3 dB and − 19 dB, respectively, in 50 nm bandwidth in the third telecom window from 1525 to 1575 nm. With a compact footprint of 10 µm × 960 µm, this device exhibits a relatively large width tolerance of ± 20 nm and a height tolerance of ± 10 nm. Furthermore, the conceptual principle of the proposed multimode switch can be reconfigurable and scalable in multifunctional on-chip mode-division multiplexing optical interconnects.

Sign in / Sign up

Export Citation Format

Share Document