scholarly journals Carrier-capture-assisted optoelectronics based on van der Waals materials to imitate medicine-acting metaplasticity

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Qianfan Nie ◽  
Caifang Gao ◽  
Feng-Shou Yang ◽  
Ko-Chun Lee ◽  
Che-Yi Lin ◽  
...  
Keyword(s):  
Weight Change ◽  
Synaptic Weight ◽  
Van Der Waals ◽  
Low Frequency ◽  
Photonic Devices ◽  
Frequency Noise ◽  
Carrier Capture ◽  
Electronic Engineering ◽  
Neural Simulation ◽  
Van Der Waals Materials

AbstractRecently, researchers have focused on optoelectronics based on two-dimensional van der Waals materials to realize multifunctional memory and neuron applications. Layered indium selenide (InSe) semiconductors satisfy various requirements as photosensitive channel materials, and enable the realization of intriguing optoelectronic applications. Herein, we demonstrate InSe photonic devices with different trends of output currents rooted in the carrier capture/release events under various gate voltages. Furthermore, we reported an increasing/flattening/decreasing synaptic weight change index (∆Wn) via a modulated gate electric field, which we use to imitate medicine-acting metaplasticity with effective/stable/ineffective features analogous to the synaptic weight change in the nervous system of the human brain. Finally, we take advantage of the low-frequency noise (LFN) measurements and the energy-band explanation to verify the rationality of carrier capture-assisted optoelectronics applied to neural simulation at the device level. Utilizing optoelectronics to simulate essential biomedical neurobehaviors, we experimentally demonstrate the feasibility and meaningfulness of combining electronic engineering with biomedical neurology.

Low-frequency noise in quasi-1D TaSe3 van der Waals nanowires

2017 ◽  
Author(s):  
G. Liu ◽  
A.A. Balandin ◽  
S. L. Rumyantsev ◽  
M. S. Shur ◽  
M.A. Bloodgood ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

scholarly journals The charge carrier capture–emission process – the main source of the low-frequency noise in homogeneous semiconductors

2017 ◽  
Vol 56 (4) ◽  
pp. 200-206 ◽  
Author(s):  
Vilius Palenskis
Keyword(s):  
Charge Carrier ◽  
Noise Level ◽  
Relaxation Times ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Carrier Capture ◽  
Emission Process ◽  
Minimum Number ◽  
Charge Carrier Capture

The possibility of determination of the number of localized capture centers of defects (relaxators) that cause low-frequency noise in a particular frequency range has been investigated. Here it is shown that a minimum number of relaxators is needed to generate 1/f type low-frequency noise only when relaxation times are arbitrarily distributed one-by-one in every two-octave range. The expression for estimation of the low-frequency noise level of the sample under test is presented. The presented expression for 1/f noise explains not only the noise level dependence both on the frequency and number of defects in the sample but also the observed noise intensity dependence on the mobility of free charge carriers. It is shown that the main source that causes low-frequency noise in homogeneous semiconductors is the charge carrier capture–emission process.

Estimating the Quality of Thermionic Cathodes for Microwave Vacuum Tubes Using the Low-Frequency Noise Parameters

Vestnik MEI ◽  
2018 ◽  
Vol 5 (5) ◽  
pp. 120-127
Author(s):  
Mikhail D. Vorobyev ◽  
◽  
Dmitriy N. Yudaev ◽  
Andrey Yu. Zorin ◽  
◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Parameters ◽  
Thermionic Cathodes ◽  
Vacuum Tubes

Simulation of Low Frequency Noise in a CCTWT

1999 ◽  
Author(s):  
Charles K. Birdsall ◽  
J. P. Varboncoeur ◽  
P. J. Christensen
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Noise source location and scaling of subsonic upper-surface blowing

2020 ◽  
Vol 19 (3-5) ◽  
pp. 191-206
Author(s):  
Trae L Jennette ◽  
Krish K Ahuja
Keyword(s):  
Strouhal Number ◽  
Noise Source ◽  
Low Frequency ◽  
Directivity Pattern ◽  
Source Location ◽  
Dipole Source ◽  
Frequency Noise ◽  
Noise Sources ◽  
Trailing Edge ◽  
Trailing Edge Noise

This paper deals with the topic of upper surface blowing noise. Using a model-scale rectangular nozzle of an aspect ratio of 10 and a sharp trailing edge, detailed noise contours were acquired with and without a subsonic jet blowing over a flat surface to determine the noise source location as a function of frequency. Additionally, velocity scaling of the upper surface blowing noise was carried out. It was found that the upper surface blowing increases the noise significantly. This is a result of both the trailing edge noise and turbulence downstream of the trailing edge, referred to as wake noise in the paper. It was found that low-frequency noise with a peak Strouhal number of 0.02 originates from the trailing edge whereas the high-frequency noise with the peak in the vicinity of Strouhal number of 0.2 originates near the nozzle exit. Low frequency (low Strouhal number) follows a velocity scaling corresponding to a dipole source where as the high Strouhal numbers as quadrupole sources. The culmination of these two effects is a cardioid-shaped directivity pattern. On the shielded side, the most dominant noise sources were at the trailing edge and in the near wake. The trailing edge mounting geometry also created anomalous acoustic diffraction indicating that not only is the geometry of the edge itself important, but also all geometry near the trailing edge.

Sign in / Sign up

Export Citation Format

Share Document