All-organic coaxial nanocables with interfacial charge-transfer layers: electrical conductivity and light-emitting-transistor behavior

2010 ◽  
Vol 20 (6) ◽  
pp. 1062-1064 ◽  
Author(s):  
Jong H. Kim ◽  
Akira Watanabe ◽  
Jong Won Chung ◽  
Yunoh Jung ◽  
Byeong-Kwan An ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Charge Transfer ◽  
Interfacial Charge Transfer ◽  
Light Emitting ◽  
Coaxial Nanocables ◽  
Interfacial Charge

Enhancement of Interfacial Charge Transfer of TiO2/Graphene with Doped Ca2+ for Improving Electrical Conductivity

2021 ◽  
Vol 13 (35) ◽  
pp. 41875-41885
Author(s):  
Tao E ◽  
Zengying Ma ◽  
Ding Cai ◽  
Shuyi Yang ◽  
Yun Li
Keyword(s):  
Electrical Conductivity ◽  
Charge Transfer ◽  
Interfacial Charge Transfer ◽  
Interfacial Charge

The suppression of spin–orbit coupling effect by the ZnO layer of La0.7Sr0.3MnO3/ZnO heterostructures grown on (001) oriented Si restores the negative magnetoresistance

Nanoscale ◽  
2021 ◽  
Author(s):  
Bibekananda Das ◽  
Prahallad Padhan
Keyword(s):  
Charge Transfer ◽  
Coupling Effect ◽  
Orbit Coupling ◽  
Negative Magnetoresistance ◽  
Magnetic Scattering ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Charge Transfer ◽  
Positive Magnetoresistance ◽  
Interfacial Charge

In Si–La0.7Sr0.3MnO3, the interfacial charge transfer driven strong localized antiferromagnetic and spin–orbit couplings favor positive magnetoresistance, which is suppressed by strong magnetic scattering induced by the top ZnO layer results in negative magnetoresistance.

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