Ultra-high vacuum preparation and characterization of ultra-thin layers of SiO2 on ZrO2 and TiO2 by chemical vapour deposition of Si(OEt)4

Author(s):  
T. Jin ◽  
T. Okuhara ◽  
J. M. White
1995 ◽  
Vol 386 ◽  
Author(s):  
Y. Tao ◽  
D. Landheer ◽  
J. E. Hulse ◽  
D.-X. Xu ◽  
T. Quance

ABSTRACTWe have prepared thin SiO2 layers on Si(100) wafers by electron cyclotron resonance chemical vapour deposition (ECR-CVD) in a multi-chamber ultra-high vacuum (UHV) processing system. The oxides were characterized in-situ by single wavelength ellipsometry (SWE) and x-ray photoelectron spectroscopy (XPS) and ex-situ by Fourier transform infra-red spectroscopy (FTIR), spectroscopic ellipsometry (SE) and capacitance-voltage (CV) electrical measurements. Films deposited at higher pressures, low powers and low silane flow rates had excellent physical and electrical properties. Films deposited at 400 °C had better physical properties than those of thermal oxides grown in dry oxygen at 700 °C. A 1 minute anneal at 950 °C reduced the fast interface state density from 1.2×1011 to 7×1010 eV−1cm−2


RSC Advances ◽  
2016 ◽  
Vol 6 (105) ◽  
pp. 102956-102960 ◽  
Author(s):  
Sapna D. Ponja ◽  
Ivan P. Parkin ◽  
Claire J. Carmalt

The facile synthesis of Al2O3 in the amorphous and corundum phase on glass and quartz substrates, respectively, is reported.


2015 ◽  
Vol 13 (7-9) ◽  
pp. 614-617 ◽  
Author(s):  
Stephanie Bley ◽  
Max Rückmann ◽  
Alejandra Castro-Carranza ◽  
Florian Meierhofer ◽  
Lutz Mädler ◽  
...  

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