Key role of ancillary ligands in imparting blue shift in electroluminescence wavelength in ruthenium polypyridyl light-emitting diodes

2014 ◽  
Vol 38 (11) ◽  
pp. 5312-5323 ◽  
Author(s):  
Hashem Shahroosvand ◽  
Shiva Rezaei ◽  
Ezeddin Mohajerani ◽  
Malek Mahmoudi ◽  
Mohammad Ali Kamyabi ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Blue Shift ◽  
Ligand Substitution ◽  
Ancillary Ligand ◽  
Peak Wavelength ◽  
Ruthenium Polypyridyl ◽  
Ancillary Ligands ◽  
Light Emitting

Ancillary ligand substitution proves to be an effective way to produce the blue shift of electroluminescence peak wavelength.

InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak wavelength

2014 ◽  
Vol 7 (2) ◽  
pp. 025203 ◽  
Author(s):  
Wenbin Lv ◽  
Lai Wang ◽  
Lei Wang ◽  
Yuchen Xing ◽  
Di Yang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Blue Shift ◽  
Peak Wavelength ◽  
Light Emitting

Nitride-Based Light-Emitting Diodes Grown on Particular Substrates: ZrB2,(3038) 4H-SiC and r-faced Sapphire.

2004 ◽  
Vol 831 ◽  
Author(s):  
Satoshi Kamiyama ◽  
Motoaki Iwaya ◽  
Hiroshi Amano ◽  
Isamu Akasaki
Keyword(s):  
Electrical Transport ◽  
Light Emitting Diodes ◽  
Low Cost ◽  
Blue Shift ◽  
Practical Application ◽  
Peak Wavelength ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Nitride Layers

ABSTRACTNew substrate materials; ZrB2,(3038) 4H-SiC and r-faced sapphire, are evaluated for use in nitride-based light-emitting diodes (LEDs). They are thought to be suitable for low-cost, short-wavelength, and highly efficient light-emitting devices. The ZrB2 substrate presents a high-quality nitride layers and a blue-violet LED with an excellent L-I curve. A vertical electrical transport is also possible due to its preferable work function and high electrical conductivity. Nitride layers tilted 54.7° from the c-plane can be grown on (3038) 4H-SiC. The LED grown on the (3038) 4H-SiC substrate shows a smaller blue shift of the EL peak wavelength with increasing driving current. Although the crystalline quality of nitride layers on r-faced sapphire was improved with the optimization of the misorientation angle, the performance of blue-violet LEDs is still low. Further work is needed to enable the practical application of r-faced sapphire to nitride-based LEDs.

Unraveling the Role of Crystallization Dynamics on Luminescence Characteristics of Perovskite Light‐Emitting Diodes

2021 ◽  
pp. 2100023
Author(s):  
Kong‐Chao Shen ◽  
Jing‐Kun Wang ◽  
Yang Shen ◽  
Yan‐Qing Li ◽  
Ming‐Lei Guo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Crystallization Dynamics ◽  
Luminescence Characteristics

Understanding the Role of Ion Migration in the Operation of Perovskite Light-Emitting Diodes by Transient Measurements

2020 ◽  
Vol 12 (43) ◽  
pp. 48845-48853
Author(s):  
Qi Dong ◽  
Juliana Mendes ◽  
Lei Lei ◽  
Dovletgeldi Seyitliyev ◽  
Liping Zhu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Ion Migration ◽  
Light Emitting ◽  
Transient Measurements

scholarly journals The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga2O3 Substrate for Vertical Light Emitting Diodes

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 42
Author(s):  
Jie Zhao ◽  
Weijiang Li ◽  
Lulu Wang ◽  
Xuecheng Wei ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Stark Effect ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Strain Relaxation ◽  
Blue Shift ◽  
Peak Position ◽  
Excitation Power ◽  
Light Extraction Efficiency ◽  
Excitation Power Density ◽  
Light Emitting

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga2O3 nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga2O3 substrate.

Highly efficient blue phosphorescent iridium(iii) complexes with various ancillary ligands for partially solution-processed organic light-emitting diodes

2017 ◽  
Vol 5 (36) ◽  
pp. 9306-9314 ◽  
Author(s):  
Peng Tao ◽  
Yuanbing Zhang ◽  
Jiong Wang ◽  
Liuwei Wei ◽  
Hongxin Li ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Solution Processed ◽  
Ancillary Ligands ◽  
Light Emitting ◽  
Chemical Structures ◽  
Highly Efficient ◽  
Organic Light ◽  
Blue Phosphorescent

Excellent blue/pure blue iridium(iii) phosphors with high ΦPL, narrow FWHMs and robust chemical structures are designed for partially solution-processed OLEDs.

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