Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate

The presence of hexagonal-pyramid-shaped hillocks (HPHs) in AlGaN epitaxial films affects device character- istics; this effect is significant in DUV laser diodes (LDs) on AlN substrates, where the presence of HPHs under the p-electrode increases the threshold current density and inhibits the lasing. In this study, we investigated the difference between the lasing characteristics of LDs with and without HPHs. It was found that in the presence of HPHs, the threshold excitation power density increased and the slope efficiency decreased by optical excitation. To investigate the cause of these phenomena, we performed structural, optical, and electrical analyses of the HPHs. Various imaging techniques were used to directly capture the characteristics of the HPHs. As a result, we concluded that HPHs cause the degradation of LD characteristics due to a combination of structural, optical, and electrical factors.

Volume and surface effects on two-photonic and three-photonic processes in dry co-doped upconversion nanocrystals

Despite considerable advances in synthesizing high-quality core/shell upconversion (UC) nanocrystals (NC; UCNC) and UCNC photophysics, the application of near-infrared (NIR)-excitable lanthanide-doped UCNC in the life and material sciences is still hampered by the relatively low upconversion luminescence (UCL) of UCNC of small size or thin protecting shell. To obtain deeper insights into energy transfer and surface quenching processes involving Yb3+ and Er3+ ions, we examined energy loss processes in differently sized solid core NaYF4 nanocrystals doped with either Yb3+ (YbNC; 20% Yb3+) or Er3+ (ErNC; 2% Er3+) and co-doped with Yb3+ and Er3+ (YbErNC; 20% Yb3+ and 2% Er3+) without a surface protection shell and coated with a thin and a thick NaYF4 shell in comparison to single and co-doped bulk materials. Luminescence studies at 375 nm excitation demonstrate back-energy transfer (BET) from the 4G11/2 state of Er3+ to the 2F5/2 state of Yb3+, through which the red Er3+4F9/2 state is efficiently populated. Excitation power density (P)-dependent steady state and time-resolved photoluminescence measurements at different excitation and emission wavelengths enable to separate surface-related and volume-related effects for two-photonic and three-photonic processes involved in UCL and indicate a different influence of surface passivation on the green and red Er3+ emission. The intensity and lifetime of the latter respond particularly to an increase in volume of the active UCNC core. We provide a three-dimensional random walk model to describe these effects that can be used in the future to predict the UCL behavior of UCNC.

Optimized photoluminescence quantum yield in upconversion composites considering the scattering, inner-filter effects, thickness, self-absorption, and temperature

Optimizing upconversion (UC) composites is challenging as numerous effects influence their unique emission mechanism. Low scattering mediums increase the number of dopants excited, however, high scattering mediums increase the UC efficiency due to its non-linear power dependency. Scattering also leads to greater thermal effects and emission saturation at lower excitation power density (PD). In this work, a photoluminescence quantum yield (PLQY) increase of 270% was observed when hexagonal NaYF4:(18%)Yb3+,(2%)Er3+ phosphor is in air compared to a refractive index-matched medium. Furthermore, the primary inner-filter effect causes a 94% PLQY decrease when the excitation focal point is moved from the front of the phosphor to 8.4 mm deep. Increasing this effect limits the maximum excitation PD, reduces thermal effects, and leads to emission saturation at higher excitation PDs. Additionally, self-absorption decreases the PLQY as the phosphor’s thickness increases from 1 to 9 mm. Finally, in comparison to a cuboid cuvette, a 27% PLQY increase occurs when characterizing the phosphor in a cylindrical cuvette due to a lensing effect of the curved glass, as supported by simulations. Overall, addressing the effects presented in this work is necessary to both maximize UC composite performance as well as report their PLQY more reliably.

The reduction of the thermal quenching effect in laser-excited phosphor converters using highly thermally conductive hBN particles

Phosphor converters for solid state lighting applications experience a strong thermal stress under high-excitation power densities. The recent interest in laser diode based lighting has made this issue even more severe. This research presents an effective approach to reduce the thermal quenching effect and damage of laser-excited phosphor-silicone converters using thermally conductive hexagonal boron nitride (hBN) particles. Herein, the samples are analyzed by employing phosphor thermometry based on the photoluminescence decay time, and thermo-imaging techniques. The study shows that hBN particle incorporation increases the thermal conductivity of a phosphor-silicone mixture up to 5 times. It turns out, that the addition of hBN to the Eu$$^{2+}$$ 2 + doped chalcogenide-silicone converters can increase the top-limit excitation power density from 60 to 180 W cm$$^{-2}$$ - 2 , thus reaching a 2.5 times higher output. Moreover, it is shown that the presence of hBN in Ce$$^{3+}$$ 3 + activated garnet phosphor converters, may increase the output power by up to 1.8 times and that such converters can withstand 218 W cm$$^{-2}$$ - 2 excitation. Besides, hBN particles are also found to enhance the stability of the converters chromaticity and luminous efficacy of radiation. This means that the addition of hBN particles into silicone-based phosphor converter media is applicable in a wide range of different areas, in particular, the ones requiring a high optical power output density.

Multiband emission from single β-NaYF4(Yb,Er) nanoparticles at high excitation power densities and comparison to ensemble studies

Ensemble and single particle studies of the excitation power density (P)-dependent upconversion luminescence (UCL) of core and core-shell β-NaYF4:Yb,Er upconversion nanoparticles (UCNPs) doped with 20% Yb3+ and 1% or 3% Er3+ performed over a P regime of 6 orders of magnitude reveal an increasing contribution of the emission from high energy Er3+ levels at P > 1 kW/cm2. This changes the overall emission color from initially green over yellow to white. While initially the green and with increasing P the red emission dominate in ensemble measurements at P < 1 kW/cm2, the increasing population of higher Er3+ energy levels by multiphotonic processes at higher P in single particle studies results in a multitude of emission bands in the ultraviolet/visible/near infrared (UV/vis/NIR) accompanied by a decreased contribution of the red luminescence. Based upon a thorough analysis of the P-dependence of UCL, the emission bands activated at high P were grouped and assigned to 2–3, 3–4, and 4 photonic processes involving energy transfer (ET), excited-state absorption (ESA), cross-relaxation (CR), back energy transfer (BET), and non-radiative relaxation processes (nRP). This underlines the P-tunability of UCNP brightness and color and highlights the potential of P-dependent measurements for mechanistic studies required to manifest the population pathways of the different Er3+ levels.

NIR light guided enhanced photoluminescence and temperature sensing in Ho3+/Yb3+/Bi3+ co-doped ZnGa2O4 phosphor

The conversion of NIR light into visible light has been studied in Ho3+/Yb3+/Bi3+ co-doped ZnGa2O4 phosphor for the first time. The crystallinity and particles size of the phosphor increase through Bi3+ doping. The absorption characteristics of Ho3+, Yb3+ and Bi3+ ions are identified by the UV–vis-NIR measurements. The Ho3+ doped phosphor produces intense green upconversion (UC) emission under 980 nm excitations. The emission intensity ~ excitation power density plots show contribution of two photons for the UC emissions. The UC intensity of green emission is weak in the Ho3+ doped phosphor, which enhances upto 128 and 228 times through co-doping of Yb3+ and Yb3+/Bi3+ ions, respectively. The relative and absolute temperature sensing sensitivities of Ho3+/Yb3+/5Bi3+ co-doped ZnGa2O4 phosphor are calculated to be 13.6 × 10−4 and 14.3 × 10−4 K−1, respectively. The variation in concentration of Bi3+ ion and power density produces excellent color tunability from green to red via yellow regions. The CCT also varies with concentration of Bi3+ ion and power density from cool to warm light. The color purity of phosphor is achieved to 98.6% through Bi3+ doping. Therefore, the Ho3+/Yb3+/Bi3+:ZnGa2O4 phosphors can be suitable for UC-based color tunable devices, green light emitting diodes and temperature sensing.

The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga2O3 Substrate for Vertical Light Emitting Diodes

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga2O3 nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga2O3 substrate.

Исследование характеристик сверхрешетки InGaAs/InAlGaAs для вертикально-излучающих лазеров спектрального диапазона 1300 nm

X-ray structural analysis and photoluminescence spectroscopy techniques were used to study heterostructures based on InGaAs/InAlGaAs superlattice for active regions of 1300 nm range lasers grown by molecular beam epitaxy. It is shown that the grown heterostructures have a high crystal quality. The perpendicular lattice mismatch of the average crystal lattice constant of the InGaAs/InAlGaAs superlattice with respect to the crystal lattice constant of the InP substrate is estimated at ~ +0.01%. An analysis of the photoluminescence spectra made it possible to conclude that the contribution of Auger recombination is insignificant in the studied range of excitation power density. Studies of vertical-cavity surface-emitting lasers with an active region based on the InGaAs/InAlGaAs superlattice made it possible to estimate the gain coefficient at a level of 650 cm-1 for the standard logarithmic approximation of the dependence of the gain on the current density. The transparency current density of the laser was ~150 А/cm2, which is comparable to the record low values for the case of highly strained InGaAs-GaAs and InGaAsN-GaAs quantum wells in the spectral ranges of 1200 nm and 1300 nm, respectively.

Synthesis and optical characterization of bipod carbazole derivatives

In this study, some new biscarbazole derivatives were synthesized for the purpose of being used in OLED technologies and related areas. The following compounds: {1,2-bis(2-(3,6-diphenyl-9H-carbazole-9-yl) ethoxy)ethane (C-1), bis[2-(2-(3,6- diphenyl-9H-carbazole-9-yl) ethoxy)etyl]ether (C-2), bis[2-(2-(3,6-di(naphthalene-1-yl)-9H-carbazol-9-yl)ethoxy)etyl]ether (C-3) and bis [2-(2-(3,6-di(naphthalene-2-yl)-9H-carbazol-9-yl)ethoxy) ethyl]ether (C-4) were synthesized by Suzuki-Miyaura Cross Coupling reactions. The structural properties of the synthesized compounds were characterized by FT-IR, 1H-NMR, 13C-NMR, and LC-MS. The maximum product yields of 81.6% were obtained for C-4 biscarbazole derivatives. The optical properties were studied using UV-visible and temperature/excitation power density dependent photoluminescence (PL) techniques. The emissions were observed at green and yellow-red color spectral bands. By applying Gaussian fitting to the measured spectra, the superposition of the broad peaks was deconvoluted into two peaks. The origin of emissions was attributed to π- π* transition in aromatic compounds caused by intramolecular charge transfer from host carbazole to these compounds.