Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction

ABSTRACTPhotovoltaic effects in Schottky Junction cells composed with Au/head-tail poly(3-hexylthiophene) (HT-P3HT)/Al have been studied as a function of excitation photon energy and temperature. It has been found that photocarriers are effectively generated at the interface of HT-P3HT/Al from the excitation spectra of photocurrents (photoaction spectra), which were obtained upon illumination to the Au or Al sides. The photoaction spectra also suggest that the photocarrier generation occurs at around 2.3 eV and 3.5 eV, which correspond to the peak of φ-φ* absorption and the photon energy with lower optical density region, respectively. The mechanisms of photocarrier generation are discussed taking the role of the Schottky junction into consideration.

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The photoelectric characteristics of a few-layer graphene/Si Schottky junction solar cell

International Journal of Modern Physics B ◽

10.1142/s0217979214502488 ◽

2014 ◽

Vol 29 (02) ◽

pp. 1450248 ◽

Cited By ~ 1

Author(s):

Xiying Ma ◽

Weixia Gu

Keyword(s):

Solar Cell ◽

Graphene Film ◽

Chemical Vapor ◽

Energy Conversion Efficiency ◽

Schottky Junction ◽

Mixed Gas ◽

Junction Solar Cell ◽

Photovoltaic Effects ◽

Separate Electron ◽

Few Layer Graphene

We present a study of the photovoltaic effects of a graphene/n- Si Schottky junction solar cell. The graphene/Si solar cell was prepared by means of rapid chemical vapor deposition, while the graphene films were grown with a CH 4/ Ar mixed gas under a constant flow at 950°C and then annealed at 1000°C. It was found that the junction between the graphene film and the n- Si structure played an important role in determining the device performance. An energy conversion efficiency of 2.1% was achieved under an optical illumination of 100 mW. The strong photovoltaic effects of the cell were due to device junction's ability to efficiently generate and separate electron–hole pairs.

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Electrical Characteristics of Au/n-GaN Schottky Junction with a High-k SrTiO3 Insulating Layer

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.11(4).04005 ◽

2019 ◽

Vol 11 (4) ◽

pp. 04005-1-04005-5 ◽

Cited By ~ 2

Author(s):

Varra Reddy ◽

◽

D. V. Vivekananda ◽

G. Sai Krishna ◽

B. Sri Vivek ◽

...

Keyword(s):

Schottky Junction ◽

Electrical Characteristics ◽

Insulating Layer ◽

High K

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Wind driven semiconductor electricity generator with high direct current output based on a dynamic Schottky junction

RSC Advances ◽

10.1039/d1ra02308j ◽

2021 ◽

Vol 11 (31) ◽

pp. 19106-19112

Author(s):

Xutao Yu ◽

Haonan Zheng ◽

Yanghua Lu ◽

Runjiang Shen ◽

Yanfei Yan ◽

...

Keyword(s):

Wind Energy ◽

Direct Current ◽

Schottky Junction ◽

Current Output

In this study, a generator based on a metal/semiconductor dynamic Schottky junction has achieved ultrahigh and continuous direct current output by harvesting wind energy.

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