Role of substrate surface morphology on the epitaxial growth behavior of cerium oxide films prepared by chemical solution deposition

CrystEngComm ◽  
2017 ◽  
Vol 19 (5) ◽  
pp. 795-801 ◽  
Author(s):  
L. H. Jin ◽  
Y. N. Li ◽  
J. Q. Feng ◽  
Y. Wang ◽  
C. S. Li ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Cerium Oxide ◽  
Chemical Solution Deposition ◽  
Substrate Surface ◽  
Oxide Films ◽  
Growth Behavior ◽  
Chemical Solution ◽  
Solution Deposition

Epitaxial Growth of Solution-Based Rare-Earth Niobate, RE3NbO7, Films on Biaxially Textured Ni–W Substrates

2005 ◽  
Vol 20 (1) ◽  
pp. 6-9 ◽  
Author(s):  
M. Paranthaman ◽  
M.S. Bhuiyan ◽  
S. Sathyamurthy ◽  
H.Y. Zhai ◽  
A. Goyal ◽  
...  
Keyword(s):  
Rare Earth ◽  
Critical Current Density ◽  
Epitaxial Growth ◽  
Chemical Solution Deposition ◽  
Ybco Film ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Chemical Solution ◽  
Solution Deposition

A new series of rare earth-niobate, RE3NbO7 (RE=Y,Gd,Eu), buffer layers were developed for the growth of superconducting YBa2Cu3O7−δ (YBCO) films on biaxially textured Ni–W (3 at.%) substrates. Using chemical solution deposition, smooth, crack-free, and epitaxial RE3NbO7 (RE = Y,Gd,Eu) films were grown on cube-textured Ni–W substrate. YBCO film with a critical current density of 1.1 × 106 A/cm2 in self-field at 77 K was grown directly on a single Gd3NbO7-buffered Ni–W substrate using pulsed laser deposition.

Annealing effect on in-plane alignment and surface morphology of epitaxial Bi4Ti3O12 thin films prepared by the chemical solution deposition

2001 ◽  
Vol 16 (9) ◽  
pp. 2519-2525 ◽  
Author(s):  
K. Hwang ◽  
Y. Park
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Chemical Solution Deposition ◽  
Three Dimensional ◽  
Annealing Effect ◽  
Chemical Solution ◽  
Epitaxial Relationship ◽  
Solution Deposition ◽  
X Ray ◽  
Lower Temperature

Bi4Ti3O12 thin films were grown epitaxially on SrTiO3(100) substrates by chemical solution deposition using metal naphthenates as starting materials. Homogeneous Bi–Ti solution with toluene was spin-coated onto the substrates and pyrolyzed at 500 °C for 10 min in air. Highly c-axis-oriented Bi4Ti3O12 thin films were crystallized by annealing pyrolyzed films at ≥650 °C. The x-ray pole-figure analysis indicated that the Bi4Ti3O12 thin films have an epitaxial relationship with the SrTiO3(100) substrates. The surface morphology of the films annealed at lower temperature, i.e., 650 °C, exhibited flat and smooth surfaces, while films annealed at higher temperatures, i.e., 750 and 800 °C, were characterized by three-dimensional outgrowth.

scholarly journals Effect of excess Pb on epitaxial growth of Pb(Mg1/3Nb2/3)O3 thin films prepared by chemical solution deposition process

2013 ◽  
Vol 121 (1416) ◽  
pp. 638-643 ◽  
Author(s):  
Takanori KIGUCHI ◽  
Tomohito TSUKAMOTO ◽  
Cangyu FAN ◽  
Masahiko NISHIJIMA ◽  
Toyohiko J. KONNO
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Chemical Solution Deposition ◽  
Deposition Process ◽  
Chemical Solution ◽  
Solution Deposition

Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

2014 ◽  
Vol 555 ◽  
pp. 33-38 ◽  
Author(s):  
Ken Elen ◽  
Boris Capon ◽  
Christopher De Dobbelaere ◽  
Daan Dewulf ◽  
Nick Peys ◽  
...  
Keyword(s):  
Chemical Solution Deposition ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Chemical Solution ◽  
Group V ◽  
Solution Deposition ◽  
Transparent Conducting ◽  
Doped Titania
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