Understanding the phase formation kinetics of nano-crystalline kesterite deposited on mesoscopic scaffolds via in situ multi-wavelength Raman-monitored annealing

2016 ◽  
Vol 18 (42) ◽  
pp. 29435-29446 ◽  
Author(s):  
Zhuoran Wang ◽  
Samir Elouatik ◽  
George P. Demopoulos

The in situ Raman monitored annealing method is developed in this work to provide real-time information on phase formation and crystallinity evolution of kesterite deposited on a TiO2 mesoscopic scaffold.

2019 ◽  
Vol 7 (41) ◽  
pp. 23679-23726 ◽  
Author(s):  
Manoj K. Jangid ◽  
Amartya Mukhopadhyay

Monitoring stress development in electrodes in-situ provides a host of real-time information on electro-chemo-mechanical aspects as functions of SOC and electrochemical potential.


2006 ◽  
Vol 321-323 ◽  
pp. 1707-1710
Author(s):  
Kang Ho Ahn ◽  
Yong Min Kim

A feasibility test for real-time fine particle measurements in vacuum semiconductor processing equipment has been conducted. The approach in monitoring particles in process equipment is an installation of a sensor at a critical location inside the process equipment (hence the term ‘in-situ’) to track free particle levels in real-time. Common method for particle detection in a process chamber today is a use of test wafer with a laser wafer scanner. However, this method does not give a real time information of the particle status in the process chamber. In this paper, a new method has been developed to detect particles in real time in vacuum system for particles smaller than an optical method can detect. The system consists of a particle charging region and a particle detection region in a vacuum system. Particles with 50nm are successfully detected at about 10 torr region.


2000 ◽  
Vol 43 (1) ◽  
pp. 21-23
Author(s):  
Jon Carlberg ◽  
Don Hess

Etching is the process where a layer is removed from a wafer surface through openings in a photoresist pattern. To monitor this process, a surface scan was employed. An in-situ particle monitor (ISPM) was installed on a plasma etch tool. The ISPM was incorporated so engineers and technicians could gain real-time information and notification of what is happening inside this tool during processing. Since ISPMs are real-time, they can catch problems as they are occurring. The ISPM detected two major problems on the plasma etch tool within a 3-wk period. The wafer scan data were monitored during this same time frame.


2016 ◽  
Vol 23 (1) ◽  
pp. 293-303 ◽  
Author(s):  
C. Nayak ◽  
D. Bhattacharyya ◽  
S. N. Jha ◽  
N. K. Sahoo

The growth of Au and Pt nanoparticles from their respective chloride precursors using block copolymer-based reducers has been studied by simultaneousin situmeasurement of XAS and UV–Vis spectroscopy at the energy-dispersive EXAFS beamline (BL-08) at INDUS-2 SRS at RRCAT, Indore, India. While the XANES spectra of the precursor give real-time information on the reduction process, the EXAFS spectra reveal the structure of the clusters formed at the intermediate stages of growth. The growth kinetics of both types of nanoparticles are found to be almost similar and are found to follow three stages, though the first stage of nucleation takes place earlier in the case of Au than in the case of Pt nanoparticles due to the difference in the reduction potential of the respective precursors. The first two stages of the growth of Au and Pt nanoparticles as obtained byin situXAS measurements could be corroborated by simultaneousin situmeasurement of UV–Vis spectroscopy also.


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