Resonant Raman scattering study of V, Cr and Co ions implanted into GaN
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200 keV ions of V, Cr and Co were implanted into wurtzite GaN/sapphire thin films at fluences of 5 × 1014 cm−2, 5 × 1015 cm−2 and 5 × 1016 cm−2.
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1994 ◽
Vol 50
(24)
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pp. 18211-18218
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2011 ◽
Vol 23
(33)
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pp. 334205
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1997 ◽
Vol 241
(1-2)
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pp. 161-165
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2001 ◽
Vol 34
(24)
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pp. 3430-3433
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