scholarly journals Temperature controlled cationic photo-curing of a thick, dark composite

RSC Advances ◽  
2017 ◽  
Vol 7 (7) ◽  
pp. 4046-4053 ◽  
Author(s):  
Long Yang ◽  
Jinliang Yang ◽  
Jun Nie ◽  
Xiaoqun Zhu
Keyword(s):  
Low Temperature ◽  
Light Penetration ◽  
Oxonium Ions ◽  
Temperature Controlled ◽  
Thick Composites ◽  
Photo Curing

In this research, temperature controlled cationic mechanism resolved the issues of light penetration in colored thick composites due to the sustained stability of the secondary oxonium ions species at low temperature.

Low-temperature and freeze-thaw durability of thick composites

1996 ◽  
Vol 27 (3-4) ◽  
pp. 371-379 ◽  
Author(s):  
Piyush K. Dutta ◽  
David Hui
Keyword(s):  
Low Temperature ◽  
Freeze Thaw ◽  
Thick Composites

Low-temperature-controlled synthesis and growth mechanism of AlN whiskers

2015 ◽  
Vol 19 (sup2) ◽  
pp. S2-108-S2-112 ◽  
Author(s):  
B. Peng ◽  
G. B. Qiu ◽  
C. S. Yue ◽  
X. M. Hou ◽  
L. Z. Gou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Growth Mechanism ◽  
Controlled Synthesis ◽  
Temperature Controlled

Study on Low-Temperature Oxidation’s Endothermic Character of Coal with Comparative-Oxidation Method

2012 ◽  
Vol 577 ◽  
pp. 39-42
Author(s):  
Chang Lu ◽  
Yuan Qing Liang ◽  
Hui Hui Li
Keyword(s):  
Low Temperature ◽  
Energy Conservation ◽  
Heat Release ◽  
Release Rate ◽  
Coal Sample ◽  
Spontaneous Combustion ◽  
Storage Conditions ◽  
Equation Model ◽  
Oxidation Method ◽  
Temperature Controlled

In this paper air was passed through into one progress temperature-controlled box with coal sample and nitrogen into another as comparison during the procedure of coal’s low-temperature （10～80°C）oxidation . Draw the heating curves and heating rate curve, and equation model is built combined with energy conservation, then concludes the heat release rate of the coal samples in the air conditions. The experimental results show that the condition with air is more close to the storage conditions of coal such as transportation in reality, which is very significant to prevent the spontaneous combustion of coals

Solution-Temperature-Controlled Growth of Microarc Oxidation Coatings on Aluminum Substrates

2014 ◽  
Vol 809-810 ◽  
pp. 578-582
Author(s):  
Ju Mei Zhang ◽  
Hui Cai ◽  
Wan Chang Sun ◽  
Peng Hui Cai
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Alkaline Solution ◽  
Microarc Oxidation ◽  
Solution Temperature ◽  
Adsorptive Capacity ◽  
High Temperature Solution ◽  
Temperature Solution ◽  
Temperature Controlled ◽  
Aluminum Substrates

The growth of microarc oxidation (MAO) coatings on aluminum substrates was controlled via changing solution temperature from 10 to 60 °C. The results show that an elevation of the temperature lowers the applied voltage and the coating thickness. The coating formed in low-temperature solution demonstrates large-sized pores and contains lots of elements only originating from solute such as P, W, and V. On the contrary, numerous small-sized pores disperse homogeneously on the coating synthesized in high-temperature solution. It is assumed that the variation of solution temperature affects the dissolving capacity of the alkaline solution and the adsorptive capacity of solute anions, thus dominating the growth behaviors of MAO coating.

Low Temperature ECR -Plasma Assisted MOCVD Microcrystalline and Amorphous GaN Deposition and Characterization for Electronic Devices

1998 ◽  
Vol 536 ◽  
Author(s):  
Z. Hassan ◽  
M. E. Kordesch ◽  
W. M. Jadwisienzak ◽  
H. J. Lozykowski ◽  
W. Halverson ◽  
...  
Keyword(s):  
Low Temperature ◽  
Phonon Mode ◽  
Molecular Nitrogen ◽  
Electronic Devices ◽  
Diffraction Peak ◽  
Ecr Plasma ◽  
Broad Emission ◽  
Optically Transparent ◽  
Temperature Controlled ◽  
Reactor Pressure

AbstractGaN films have been deposited over a range of temperatures from 50 C to 650 C by ECR plasma MOCVD on silicon (111) and (100), sapphire and quartz using triethylgallium and molecular nitrogen or ammonia as reagents. Growth rates of 2 um/hr are achieved on temperature-controlled substrates (total reactor pressure 0.5 mTorr, 250 watts at 2.45 GHz).Films deposited at 200, 600 and 650 C on sapphire show the GaN(0002) diffraction peak and sharp photoluminescence lines (at 10 K) between 370 and 400 nm and broad emission at 530-550 nm. Broad photoluminescence at 390 nm is observed from GaN/Si( 11). Films deposited at 50 and 100 C show no evidence of a crystalline phase or GaN(0002) diffraction peak. The films are smooth and optically transparent. A broad photoluminescence peak at 520 nm, with a fwhm of about 150 nm is also observed (at 10K). The optical bandgap is measured to be about 2.6-2.7 eV. All of these films show a GaN LO phonon mode at 736 cm-l. IR spectra indicate some hydrocarbon impurities in the low temperature films.Prototype devices (Schottky barrier diodes) have been made from MOCVD GaN and amorphous GaN.

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