scholarly journals Designing 3D topological insulators by 2D-Xene (X = Ge, Sn) sheet functionalization in GaGeTe-type structures

2017 ◽  
Vol 5 (19) ◽  
pp. 4752-4762 ◽  
Author(s):  
F. Pielnhofer ◽  
T. V. Menshchikova ◽  
I. P. Rusinov ◽  
A. Zeugner ◽  
I. Yu. Sklyadneva ◽  
...  

First-principles calculations identify isostructural, layered AXTe (A = Ga, In; X = Ge, Sn) compounds as a host for topological phases.

2014 ◽  
Vol 70 (2) ◽  
pp. 118-122 ◽  
Author(s):  
Junwei Liu ◽  
Yong Xu ◽  
Jian Wu ◽  
Bing-Lin Gu ◽  
S. B. Zhang ◽  
...  

First-principles calculations show that strain-induced topological phase transition is auniversalphenomenon in those narrow-gap semiconductors for which the valence band maximum (VBM) and conduction band minimum (CBM) have different parities. The transition originates from the opposite responses of the VBM and CBM, whose magnitudes depend critically on the direction of the applied strain. Our work suggests that strain can play a unique role in tuning the electronic properties of topological insulators for device applications, as well as in the achievement of new topological insulators.


2016 ◽  
Vol 4 (10) ◽  
pp. 2088-2094 ◽  
Author(s):  
Run-wu Zhang ◽  
Wei-xiao Ji ◽  
Chang-wen Zhang ◽  
Sheng-shi Li ◽  
Ping Li ◽  
...  

Based on first-principles calculations, we predict that 2D germanene decorated with ethynyl-derivatives (GeC2X; X = H, F, Cl, Br, I) can be topological insulators with large band-gaps for room-temperature applications.


2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Yan Liang ◽  
Ning Mao ◽  
Ying Dai ◽  
Liangzhi Kou ◽  
Baibiao Huang ◽  
...  

AbstractThe intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to design such system is unclear and the feasible approach to achieve the coexistence of two parameter orders is absent. Here, we propose a general paradigm to design 2D ferroelectric topological insulators by sliding topological multilayers on the basis of first-principles calculations. Taking trilayer Bi2Te3 as a model system, we show that in the van der Waals multilayer based 2D topological insulators, the in-plane and out-of-plane ferroelectricity can be induced through a specific interlayer sliding, to enable the coexistence of ferroelectric and topological orders. The strong coupling of the order parameters renders the topological states sensitive to polarization flip, realizing non-volatile ferroelectric control of topological properties. The revealed design-guideline and ferroelectric-topological coupling not only are useful for the fundamental research of the coupled ferroelectric and topological physics in 2D lattices, but also enable innovative applications in nanodevices.


2012 ◽  
Vol 86 (17) ◽  
Author(s):  
V. Chis ◽  
I. Yu. Sklyadneva ◽  
K. A. Kokh ◽  
V. A. Volodin ◽  
O. E. Tereshchenko ◽  
...  

2014 ◽  
Vol 52 (12) ◽  
pp. 1025-1029
Author(s):  
Min-Wook Oh ◽  
Tae-Gu Kang ◽  
Byungki Ryu ◽  
Ji Eun Lee ◽  
Sung-Jae Joo ◽  
...  

2019 ◽  
Author(s):  
Michele Pizzocchero ◽  
Matteo Bonfanti ◽  
Rocco Martinazzo

The manuscript addresses the issue of the structural distortions occurring at multiple bonds between high main group elements, focusing on group 14. These distortions are known as trans-bending in silenes, disilenes and higher group analogues, and buckling in 2D materials likes silicene and germanene. A simple but correlated \sigma + \pi model is developed and validated with first-principles calculations, and used to explain the different behaviour of second- and higher- row elements.


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