scholarly journals Surface structure, optoelectronic properties and charge transport in ZnO nanocrystal/MDMO-PPV multilayer films

2018 ◽  
Vol 20 (17) ◽  
pp. 12260-12271 ◽  
Author(s):  
Qing Lian ◽  
Mu Chen ◽  
Muhamad Z. Mokhtar ◽  
Shanglin Wu ◽  
Mingning Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Transport ◽  
Surface Structure ◽  
Light Absorption ◽  
Open Circuit Voltage ◽  
Multilayer Films ◽  
Open Circuit ◽  
Optoelectronic Properties ◽  
Photoluminescence Quenching ◽  
Zno Nanocrystal

ZnO nanocrystal/MDMO-PPV multilayer films were studied that contained six bilayers and showed excellent light absorption tuneability, photoluminescence quenching and solar cells exhibited a surprisingly high open circuit voltage.

scholarly journals The impact of energy alignment and interfacial recombination on the internal and external open-circuit voltage of perovskite solar cells

2019 ◽  
Vol 12 (9) ◽  
pp. 2778-2788 ◽  
Author(s):  
Martin Stolterfoht ◽  
Pietro Caprioglio ◽  
Christian M. Wolff ◽  
José A. Márquez ◽  
Joleik Nordmann ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Transport ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Interfacial Recombination ◽  
The Impact

We quantify recombination losses in the bulk and interfaces for different perovskite compositions and popular charge transport layers.

p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching

2019 ◽  
Vol 7 (32) ◽  
pp. 18971-18979 ◽  
Author(s):  
Tian Du ◽  
Weidong Xu ◽  
Matyas Daboczi ◽  
Jinhyun Kim ◽  
Shengda Xu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Photoluminescence Quenching ◽  
Hole Transport Layers

Reduction in p-doping of the organic hole transport layer (HTL) leads to substantial improvements in PV performance in planar p–i–n perovskite solar cells.

scholarly journals Influence of Charge Transport Layers on Open-Circuit Voltage and Hysteresis in Perovskite Solar Cells

Joule ◽  
2018 ◽  
Vol 2 (4) ◽  
pp. 788-798 ◽  
Author(s):  
Sandheep Ravishankar ◽  
Saba Gharibzadeh ◽  
Cristina Roldán-Carmona ◽  
Giulia Grancini ◽  
Yonghui Lee ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Transport ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit

An H-shaped, small molecular non-fullerene acceptor for efficient organic solar cells with an impressive open-circuit voltage of 1.17 V

2017 ◽  
Vol 1 (8) ◽  
pp. 1600-1606 ◽  
Author(s):  
Akhil Gupta ◽  
Anushri Rananaware ◽  
Pedada Srinivasa Rao ◽  
Duong Duc La ◽  
Ante Bilic ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Acceptor ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Optoelectronic Properties ◽  
Molecular Electron

An H-shaped, non-fullerene small molecular electron acceptor displayed promising optoelectronic properties and afforded an encouraging efficiency of 5.42%.

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Reducing recombination and enhancing open circuit voltage by Strontium-alloying in multiple cation perovskite solar cells

2017 ◽  
Author(s):  
Pietro Caprioglio ◽  
Fengshuo Zu ◽  
Christian M. Wolff ◽  
Martin Stolterfhot ◽  
Norbert Koch ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit
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