Proximity-induced magnetism and an anomalous Hall effect in Bi2Se3/LaCoO3: a topological insulator/ferromagnetic insulator thin film heterostructure

Nanoscale ◽  
2018 ◽  
Vol 10 (21) ◽  
pp. 10041-10049 ◽  
Author(s):  
Shanna Zhu ◽  
Dechao Meng ◽  
Genhao Liang ◽  
Gang Shi ◽  
Peng Zhao ◽  
...  

A high-quality Bi2Se3/LaCoO3 heterostructure is fabricated as a new TI/FMI system for investigating a proximity-induced ferromagnetic phase in topological insulators.

2020 ◽  
Vol 7 (9) ◽  
pp. 2431-2438
Author(s):  
Hao Wang ◽  
Ning Mao ◽  
Chengwang Niu ◽  
Shiying Shen ◽  
Myung-Hwan Whangbo ◽  
...  

Magnetic topological insulators (TIs), including the quantum anomalous Hall effect and antiferromagnetic TIs, have attracted significant attention owing to the exotic properties they give rise to, however, ferromagnetic TIs with gapless surface/edge states and a nonzero topological invariant have not been reported so far.


2020 ◽  
Vol 4 (9) ◽  
Author(s):  
Nan Liu ◽  
Xuefan Niu ◽  
Yuxin Liu ◽  
Qinghua Zhang ◽  
Lin Gu ◽  
...  

2017 ◽  
Vol 119 (1) ◽  
Author(s):  
Minoru Kawamura ◽  
Ryutaro Yoshimi ◽  
Atsushi Tsukazaki ◽  
Kei S. Takahashi ◽  
Masashi Kawasaki ◽  
...  

2015 ◽  
Vol 1120-1121 ◽  
pp. 424-428
Author(s):  
C.Y. Zou ◽  
Lai Sen Wang ◽  
Xiang Liu ◽  
Q.F. Zhang ◽  
Jun Bao Wang ◽  
...  

In this paper, we studied the dependence of temperature and weak localization (WL) effect on the anomalous Hall effect (AHE) in strong disordered and poorly crystallized metal Co thin film deposited by high-pressure magnetron sputtering. The temperature coefficients of resistivity is positive at high temperatures and becomes negative at low temperatures, which is the typical characteristic of weak localization effect in dirty metal regime due to the strong disorder. The saturation anomalous Hall resistivity (ρAxy) have no scaling relation between ρxy and ρxx in weak localization region with temperature below 50 K. In metal region, temperature ranged from 50 K to 300 K, the relation between ρAxy and ρxxis ρAxy=A+bρ2xx, which indicates that the AHE in this Co thin film is scattering-independence at high temperature. The results also shows that the WL effect have a significant impact on the AHE of the Co thin film at low temperature.


2020 ◽  
Vol 32 (34) ◽  
pp. 2001460
Author(s):  
Lei Pan ◽  
Alexander Grutter ◽  
Peng Zhang ◽  
Xiaoyu Che ◽  
Tomohiro Nozaki ◽  
...  

2019 ◽  
Vol 123 (1) ◽  
Author(s):  
Masataka Mogi ◽  
Taro Nakajima ◽  
Victor Ukleev ◽  
Atsushi Tsukazaki ◽  
Ryutaro Yoshimi ◽  
...  

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