Layer dependent magnetoresistance of vertical MoS2 magnetic tunnel junctions
Vertical spin valve junctions consisting of MoS2 layers have been fabricated by ultraclean fabrication method. The magnetoresistance of the spin valve junction increases as the thickness of MoS2 layer is increased.
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High-temperature operations of rotation angle sensors with spin-valve-type magnetic tunnel junctions
2005 ◽
Vol 41
(10)
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pp. 3628-3630
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2007 ◽
Vol 204
(12)
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pp. 3942-3945
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