scholarly journals Plasmonically-powered hot carrier induced modulation of light emission in a two-dimensional GaAs semiconductor quantum well

Nanoscale ◽  
2019 ◽  
Vol 11 (9) ◽  
pp. 3827-3836 ◽  
Author(s):  
Eric Ashalley ◽  
Karol Gryczynski ◽  
Zhiming Wang ◽  
Gregory Salamo ◽  
Arup Neogi
Keyword(s):  
Quantum Well ◽  
Electrostatic Interaction ◽  
Frequency Modulation ◽  
Light Emission ◽  
Two Dimensional ◽  
Hot Carrier ◽  
Semiconductor Quantum Well

Plasmonic and electrostatic interaction among the Au and Ga nanoparticles results in frequency modulation and longer lifetime of emitted light.

Thermopower in Quasi-Two-Dimensional Semiconductor Quantum Well Structures

1986 ◽  
Vol 137 (2) ◽  
pp. 683-689 ◽  
Author(s):  
S. S. Kubakaddi ◽  
B. G. Mulimani ◽  
V. M. Jali
Keyword(s):  
Quantum Well ◽  
Two Dimensional ◽  
Quantum Well Structures ◽  
Semiconductor Quantum Well

scholarly journals Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study

Nanophotonics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 337-349 ◽  
Author(s):  
Ali Ramazani ◽  
Farzaneh Shayeganfar ◽  
Jaafar Jalilian ◽  
Nicholas X. Fang
Keyword(s):  
Light Emission ◽  
Luminescence Spectra ◽  
Two Dimensional ◽  
Electron Hole ◽  
Strong Electron ◽  
Hot Carrier ◽  
2D Semiconductors ◽  
Plasmon Polaritons ◽  
Quantum Framework ◽  
External Strain

AbstractExciton (strong electron–hole interactions) and hot carriers (HCs) assisted by surface plasmon polaritons show promise to enhance the photoresponse of nanoelectronic and optoelectronic devices. In the current research, we develop a computational quantum framework to study the effect of coupled exciton and HCs on the photovoltaic energy distribution, scattering process, polarizability, and light emission of two-dimensional (2D) semiconductors. Using a stable 2D semiconductor (semihydrogenated SiB) as our example, we theoretically show that external strain and thermal effect on the SiB can lead to valley polarized plasmon quasiparticles and HC generation. Our results reveal that the electron–phonon and electron–electron (e–e) interactions characterize the correlation between the decay rate, scattering of excitons, and generation of HCs in 2D semiconductors. Moreover, phonon assisted luminescence spectra of SiB suggest that light emission can be enhanced by increasing strain and temperature. The polarized plasmon with strong coupling of electronic and photonics states in SiB makes it as a promising candidate for light harvesting, plasmonic photocurrent devices, and quantum information.

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