scholarly journals Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method

RSC Advances ◽  
2018 ◽  
Vol 8 (37) ◽  
pp. 20990-20995 ◽  
Author(s):  
Xiang Yang ◽  
Shu Jiang ◽  
Jun Li ◽  
Jian-Hua Zhang ◽  
Xi-Feng Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Solution Technique ◽  
Term Stability ◽  
Long Term Stability ◽  
Process Method

In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique.

Separating the impact of oxygen and water on the long-term stability of n-channel perylene diimide thin-film transistors

2015 ◽  
Vol 26 ◽  
pp. 340-344 ◽  
Author(s):  
Ute Zschieschang ◽  
Konstantin Amsharov ◽  
Martin Jansen ◽  
Klaus Kern ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Perylene Diimide ◽  
Term Stability ◽  
Long Term Stability ◽  
The Impact

Material Aspects of A-Sin:H Based 2D Direct X-Ray Sensor Array

1998 ◽  
Vol 507 ◽  
Author(s):  
I. Popov ◽  
G. Van Doorselaer ◽  
A. Van Calster ◽  
H. De Smet ◽  
E. Boesman ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sensor Array ◽  
X Ray ◽  
Term Stability ◽  
Long Term Stability

ABSTRACTThe possibility of creating an 2D X-ray sensor array on the base of a-SiN:H thin films without switching elements and an X-ray conversion layer is presented in this report. The behavior of a-SiN:H Thin-Film Diode under X-ray irradiation, its limitations, and ways of increasing long-term stability and sensitivity of the sensor are discussed.

Enhancement of long-term stability of pentacene thin-film transistors encapsulated with transparent SnO2

2005 ◽  
Vol 252 (5) ◽  
pp. 1332-1338 ◽  
Author(s):  
Woo Jin Kim ◽  
Won Hoe Koo ◽  
Sung Jin Jo ◽  
Chang Su Kim ◽  
Hong Koo Baik ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Term Stability ◽  
Long Term Stability

scholarly journals Improvement in switching characteristics and long-term stability of Zn-O-N thin-film transistors by silicon doping

AIP Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 065120 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Tatsuya Takei ◽  
Mitsuru Nakata ◽  
Masashi Miyakawa ◽  
Yoshihide Fujisaki ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Silicon Doping ◽  
Term Stability ◽  
Long Term Stability ◽  
Switching Characteristics

Achieving over 4% efficiency for SnS/CdS thin-film solar cells by improving the heterojunction interface quality

2020 ◽  
Vol 8 (39) ◽  
pp. 20658-20665 ◽  
Author(s):  
Jae Yu Cho ◽  
SeongYeon Kim ◽  
Raju Nandi ◽  
Junsung Jang ◽  
Hee-Sun Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Vapor Transport ◽  
Thin Film Solar Cells ◽  
Interface Quality ◽  
Heterojunction Solar Cells ◽  
Term Stability ◽  
Long Term Stability ◽  
Cds Thin Film

The highest efficiency of 4.225% for vapor-transport-deposited SnS absorber/CdS heterojunction solar cells with good long-term stability over two years is achieved.

Formation, Performance, and Long-Term Stability of Nanostructured Ni-YSZ Thin Film Electrodes

2021 ◽  
Vol 4 (9) ◽  
pp. 9046-9056
Author(s):  
Buse Bilbey ◽  
Meltem Sezen ◽  
Cleva W. Ow-Yang ◽  
Busra Tugba Camic ◽  
Aligul Buyukaksoy
Keyword(s):  
Thin Film ◽  
Term Stability ◽  
Long Term Stability ◽  
Ysz Thin Film ◽  
Thin Film Electrodes

A thin film (<200 nm) perovskite solar cell with 18% efficiency

2020 ◽  
Vol 8 (34) ◽  
pp. 17420-17428 ◽  
Author(s):  
Yong Zhang ◽  
Nam-Gyu Park
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Perovskite Solar Cell ◽  
Term Stability ◽  
Long Term Stability

Achieving 18% efficiency based on a stamped 171 nm-thick EAPbI3 film along with long-term stability.

scholarly journals Influence of Evaporation-Deposition Geometry on Conductive Thin Films

1980 ◽  
Vol 7 (1-3) ◽  
pp. 171-179
Author(s):  
J. Griessing
Keyword(s):  
Thin Films ◽  
Angular Distribution ◽  
Cu Films ◽  
Term Stability ◽  
Long Term Stability ◽  
Conductive Films ◽  
Conductive Thin Films

There is a striking dependence of the evaporation deposition geometry (i.e. angular distribution of the incident vapor beam) on the properties of deposited conductive films. This paper discusses solderability, adhesion and long-term stability of adhesion of Ti-Pd-Au, Ti-Au and Ti-Cu films. In all cases the above properties were improved by an evaporation deposition geometry with steep angles of the incident vapor beam.

Pentacene Thin-film Transistors Fabricated with a Simple Solution Process

2006 ◽  
Vol 937 ◽  
Author(s):  
Yutaka Natsume ◽  
Takashi Minakata
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Solution Process ◽  
Simple Solution ◽  
Trap States ◽  
Solution Processed ◽  
High Crystallinity ◽  
Transfer Characteristics

ABSTRACTWe have succeeded in developing a simple solution process of pentacene thin films without particular precursor materials. High crystallinity and large plate-like grains of the solution-processed thin films were observed with several analyses. The solution-processed pentacene thin-film transistors (TFTs) were also fabricated and exhibited good transfer characteristics with maximum carrier mobility above 1 cm2/Vs. The solution-processed TFTs also indicated a steep subthreshold swing and high stability of the threshold voltage against the storage in the atmosphere. The trap states and the bulk carrier density in the films were evaluated from the transfer characteristics by using the analytical model. We considered that these good properties could be attributed to the high crystallinity and the large grains of the solution-processed thin films.

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