Improved Long-Term Stability of Low-Temperature Polysilicon Thin-Film Transistors by Using a Tandem Gate Insulator with an Atomic Layer of Deposited Silicon Dioxide

2020 ◽  
Vol 77 (4) ◽  
pp. 277-281
Author(s):  
Sungsoo Lee ◽  
Jin-Seong Park ◽  
Yongtaek Hong
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Term Stability ◽  
Long Term Stability

scholarly journals Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method

RSC Advances ◽  
2018 ◽  
Vol 8 (37) ◽  
pp. 20990-20995 ◽  
Author(s):  
Xiang Yang ◽  
Shu Jiang ◽  
Jun Li ◽  
Jian-Hua Zhang ◽  
Xi-Feng Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Solution Technique ◽  
Term Stability ◽  
Long Term Stability ◽  
Process Method

In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique.

Separating the impact of oxygen and water on the long-term stability of n-channel perylene diimide thin-film transistors

2015 ◽  
Vol 26 ◽  
pp. 340-344 ◽  
Author(s):  
Ute Zschieschang ◽  
Konstantin Amsharov ◽  
Martin Jansen ◽  
Klaus Kern ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Perylene Diimide ◽  
Term Stability ◽  
Long Term Stability ◽  
The Impact

Enhancement of long-term stability of pentacene thin-film transistors encapsulated with transparent SnO2

2005 ◽  
Vol 252 (5) ◽  
pp. 1332-1338 ◽  
Author(s):  
Woo Jin Kim ◽  
Won Hoe Koo ◽  
Sung Jin Jo ◽  
Chang Su Kim ◽  
Hong Koo Baik ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Term Stability ◽  
Long Term Stability

Soluble pentacene thin-film transistor using a high solvent and heat resistive polymeric dielectric with low-temperature processability and its long-term stability

2009 ◽  
Vol 10 (3) ◽  
pp. 506-510 ◽  
Author(s):  
Kyoseung Sim ◽  
Youngill Choi ◽  
Hyojoong Kim ◽  
Sungwoo Cho ◽  
Sung Cheol Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistor ◽  
Term Stability ◽  
Long Term Stability

scholarly journals Improvement in switching characteristics and long-term stability of Zn-O-N thin-film transistors by silicon doping

AIP Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 065120 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Tatsuya Takei ◽  
Mitsuru Nakata ◽  
Masashi Miyakawa ◽  
Yoshihide Fujisaki ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Silicon Doping ◽  
Term Stability ◽  
Long Term Stability ◽  
Switching Characteristics

Characteristics of SiO2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors

2007 ◽  
Vol 124-126 ◽  
pp. 247-250 ◽  
Author(s):  
Won Jun Lee ◽  
Min Ho Chun ◽  
Kwang Su Cheong ◽  
Kwang Chol Park ◽  
Chong Ook Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Sio2 Films ◽  
Layer Deposition ◽  
Better Than

SiO2 films were prepared by atomic layer deposition (ALD) technique, and their physical and electrical properties were characterized for being applied as a gate insulator of low-temperature polysilicon thin-film transistors. ALD SiO2 films were deposited at 350–400 oC using alternating exposures of SiH2Cl2 and O3/O2, and the characteristics of the deposited films were improved with increasing deposition temperature. The ALD films deposited at 400 oC exhibited integrity, surface roughness and leakage current better than those of the conventional plasma-enhanced chemical vapor deposition (PECVD) films.

Achieving over 4% efficiency for SnS/CdS thin-film solar cells by improving the heterojunction interface quality

2020 ◽  
Vol 8 (39) ◽  
pp. 20658-20665 ◽  
Author(s):  
Jae Yu Cho ◽  
SeongYeon Kim ◽  
Raju Nandi ◽  
Junsung Jang ◽  
Hee-Sun Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Vapor Transport ◽  
Thin Film Solar Cells ◽  
Interface Quality ◽  
Heterojunction Solar Cells ◽  
Term Stability ◽  
Long Term Stability ◽  
Cds Thin Film

The highest efficiency of 4.225% for vapor-transport-deposited SnS absorber/CdS heterojunction solar cells with good long-term stability over two years is achieved.

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