From CuFeS2 to Ba6Cu2FeGe4S16: rational band gap engineering achieves large second-harmonic-generation together with high laser damage threshold
Keyword(s):
Band Gap
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From CuFeS2, the introduction of Ge leads to an increase in band gap. The ordered arrangement of NLO active units [GeS4] results in a strong SHG response. Finally, Ba6Cu2FeGe4S16 exhibits good NLO performance (SHG, 1.5 × AgGaSe2; LDT, 2 × AgGaSe2).
2018 ◽
Vol 30
(3)
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pp. 602-606
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Keyword(s):
2016 ◽
Vol 138
(23)
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pp. 7422-7428
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Keyword(s):
2017 ◽
Vol 23
(46)
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pp. 10978-10982
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2011 ◽
Vol 328
(1)
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pp. 81-88
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