Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2020 ◽  
Vol 22 (12) ◽  
pp. 2138-2146 ◽  
Author(s):  
G. Shu ◽  
V. G. Ralchenko ◽  
A. P. Bolshakov ◽  
E. V. Zavedeev ◽  
A. A. Khomich ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Surface Relief ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Step Growth ◽  
Growth Features

Homoepitaxial diamond growth may proceed with stops and resumptions to produce thick crystals. We found the resumption procedure to take place in a complex way, via a disturbance of step growth features, followed by the recovery after a certain time.

Growth of Highly (110) Oriented Diamond Film by Microwave Plasma Chemical Vapor Deposition

2018 ◽  
Vol 281 ◽  
pp. 893-899 ◽  
Author(s):  
Yi Fan Xi ◽  
Jian Huang ◽  
Ke Tang ◽  
Xin Yu Zhou ◽  
Bing Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Nucleation Stage

In this study, we propose a simple and effective approach to enhance (110) orientation in diamond films grown on (100) Si substrates by microwave plasma chemical vapor deposition. It is found that the crystalline structure of diamond films strongly rely on the CH4 concentration in the nucleation stage. Under the same growth condition, when the CH4 concentration is less than 7% (7%) in the nucleation stage, the diamond films exhibit randomly oriented structure; once the value exceeds 7%, the deposited films are strongly (110) oriented. It could be verified by experiments that the formation of (110) orientation in diamond films are related to the high nucleation density and high fraction of diamond-like carbon existing in nucleation samples.

X-ray Photoelectron Spectroscopy of the Interface Between Diamond Films and Tantalum Substrates

1993 ◽  
Vol 317 ◽  
Author(s):  
M.M. Waitew ◽  
S. Ismat Shah
Keyword(s):  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Stages Of Growth ◽  
Diamond Peak

ABSTRACTDiamond films were deposited in a microwave plasma chemical vapor deposition (MPCVD) system on Ta substrates using a mixture of hydrogen and methane gases. The films were grown for varying lengths of time to provide samples with no diamond growth to a continuous diamond film. These films were analyzed using X-ray photoelectron spectroscopy (XPS) in order to understand the time dependent interactions between the substrate and the incoming carbon flux. Photoelectron peaks in the Ta 4f, C Is and Ols regions have been analyzed. In the initial stages of growth, a layer of carbide forms on the substrate. As the substrate becomes supersaturated with carbon, graphite starts to form on the surface. A diamond peak begins to appear after about 30 Minutes of deposition.

Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition

1991 ◽  
Vol 8 (7) ◽  
pp. 348-351 ◽  
Author(s):  
Gao Kelin ◽  
Wang Chunlin ◽  
Zhan Rujuan ◽  
Peng Dingkun ◽  
Meng Guangyao ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Step growth in single crystal diamond grown by microwave plasma chemical vapor deposition

2006 ◽  
Vol 15 (2-3) ◽  
pp. 304-308 ◽  
Author(s):  
Pawan K. Tyagi ◽  
Abha Misra ◽  
K.N. Narayanan Unni ◽  
Padmnabh Rai ◽  
Manoj K. Singh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Single Crystal Diamond ◽  
Step Growth
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