The performance of adsorption, dissociation and diffusion mechanism of hydrogen on the Ti-doped ZrCo(110) surface

2019 ◽  
Vol 21 (23) ◽  
pp. 12597-12605 ◽  
Author(s):  
Qingqing Wang ◽  
Xianggang Kong ◽  
Huilei Han ◽  
Ge Sang ◽  
Guanghui Zhang ◽  
...  

Compared with pristine ZrCo(110), the adsorption, dissociation, and successive diffusion of hydrogen on the Ti-decorated ZrCo(110) have been investigated based on first-principles calculation.

2018 ◽  
Vol 499 ◽  
pp. 168-174 ◽  
Author(s):  
Xiao-Yong Yang ◽  
Yong Lu ◽  
Shahid Hussain ◽  
Tao Duan ◽  
Ping Zhang

2017 ◽  
Vol 8 ◽  
pp. 1742-1748
Author(s):  
Fadil Iyikanat ◽  
Ali Kandemir ◽  
Cihan Bacaksiz ◽  
Hasan Sahin

Using first-principles density functional theory calculations, we investigate adsorption properties and the diffusion mechanism of a Li atom on hydrogenated single-layer α- and β-silicene on a Ag(111) surface. It is found that a Li atom binds strongly on the surfaces of both α- and β-silicene, and it forms an ionic bond through the transfer of charge from the adsorbed atom to the surface. The binding energies of a Li atom on these surfaces are very similar. However, the diffusion barrier of a Li atom on H-α-Si is much higher than that on H-β-Si. The energy surface calculations show that a Li atom does not prefer to bind in the vicinity of the hydrogenated upper-Si atoms. Strong interaction between Li atoms and hydrogenated silicene phases and low diffusion barriers show that α- and β-silicene are promising platforms for Li-storage applications.


2017 ◽  
Vol 42 (5) ◽  
pp. 3097-3105 ◽  
Author(s):  
Guang-Xu Li ◽  
Zhi-Qiang Lan ◽  
Yu-Sheng Tseng ◽  
Wen-Zheng Zhou ◽  
Jin Guo ◽  
...  

2013 ◽  
Vol 30 (1) ◽  
pp. 017103 ◽  
Author(s):  
Juan Huang ◽  
Hong-Jin Chen ◽  
Mu-Sheng Wu ◽  
Gang Liu ◽  
Chu-Ying Ouyang ◽  
...  

2002 ◽  
Vol 749 ◽  
Author(s):  
A. van de Walle ◽  
M. Asta ◽  
P. W. Voorhees

ABSTRACTFirst-principles calculations are used to calculate the strain dependencies of the binding and diffusion-activation energies for Ge adatoms on both Si(001) and Ge(001) c(4×2) reconstructed surfaces. Our calculations reveal that over the range of strains typically sampled during quantum dot self-assembly (0 to 1% compressive strain) the binding and activation energies on a strained Ge(001) surface increase and decrease, respectively, by 0.21 eV and 0.12 eV. For a growth temperature of 600 °C, these strain-dependencies give rise to a 16-fold increase in adatom density and a 5-fold decrease in adatom diffusivity in the region of compressive strain surrounding a Ge island with a characteristic size of 10 nm lying on top of a Si substrate covered by a Ge wetting layer.


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