scholarly journals Adsorption and diffusion characteristics of lithium on hydrogenated α- and β-silicene

2017 ◽  
Vol 8 ◽  
pp. 1742-1748
Author(s):  
Fadil Iyikanat ◽  
Ali Kandemir ◽  
Cihan Bacaksiz ◽  
Hasan Sahin

Using first-principles density functional theory calculations, we investigate adsorption properties and the diffusion mechanism of a Li atom on hydrogenated single-layer α- and β-silicene on a Ag(111) surface. It is found that a Li atom binds strongly on the surfaces of both α- and β-silicene, and it forms an ionic bond through the transfer of charge from the adsorbed atom to the surface. The binding energies of a Li atom on these surfaces are very similar. However, the diffusion barrier of a Li atom on H-α-Si is much higher than that on H-β-Si. The energy surface calculations show that a Li atom does not prefer to bind in the vicinity of the hydrogenated upper-Si atoms. Strong interaction between Li atoms and hydrogenated silicene phases and low diffusion barriers show that α- and β-silicene are promising platforms for Li-storage applications.

2013 ◽  
Vol 205-206 ◽  
pp. 417-421
Author(s):  
Tatsunori Yamato ◽  
Koji Sueoka ◽  
Takahiro Maeta

The lowest energetic configurations of metal impurities in 4throw (Sc - Zn), 5throw (Y - Cd) and 6throw (Hf - Hg) elements in Ge crystals were determined with density functional theory calculations. It was found that the substitutional site is the lowest energetic configuration for most of the calculated metals in Ge. The most stable configurations of dopant (Ga, Sb) - metal complexes in Ge crystals were also investigated. Following results were obtained. (1) For Ga dopant, 1st neighbor T-site is the most stable for metals in group 3 to 7 elements while substitutional site next to Ga atom is the most stable for metals in group 8 to 12 elements. (2) For Sb dopant, substitutional site next to Sb atom is the most stable for all calculated metals. Binding energies of the interstitial metalMiwith the substitutional dopantDswere obtained by the calculated total energies. The calculated results for Ge were compared with those for Si.


2005 ◽  
Vol 864 ◽  
Author(s):  
Scott A. Harrison ◽  
Thomas F. Edgar ◽  
Gyeong S. Hwang

AbstractBased on first principles density functional theory calculations, we identify the structure and diffusion pathway for a fluorine-silicon interstitial complex (F-Sii). We find the F-Sii complex to be most stable in the singly positive charge state at all Fermi leVels. At mid-gap, the complex is found to have a binding energy of 1.08 eV relative to bond-centered F+ and (110)-split Sii. We find the F-Sii complex has an overall migration barrier of 0.76 eV, which suggests that this complex may play an important role in fluorine diffusion. Our results should lead to more accurate models that describe the behavior of fluorine co-implants crystalline silicon.


RSC Advances ◽  
2017 ◽  
Vol 7 (63) ◽  
pp. 39546-39555 ◽  
Author(s):  
Ming-Yang Liu ◽  
Yang Huang ◽  
Qing-Yuan Chen ◽  
Ze-Yu Li ◽  
Chao Cao ◽  
...  

Based on first-principles density functional theory calculations, we systemically study the properties of two-dimensional buckled single-layer bismuth (b-bismuthene).


2021 ◽  
Vol 9 ◽  
Author(s):  
Hyeong Yong Lim ◽  
Sung O Park ◽  
Su Hwan Kim ◽  
Gwan Yeong Jung ◽  
Sang Kyu Kwak

The oxygen evolution reaction (OER) plays a key role in the determination of overall water-splitting rate. Lowering the high overpotential of the OER of transition metal oxides (TMOs), which are used as conventional OER electrocatalysts, has been the focus of many studies. The OER activity of TMOs can be tuned via the strategic formation of a heterostructure with another TMO substrate. We screened 11 rutile-type TMOs (i.e., MO2; M = V, Cr, Mn, Nb, Ru, Rh, Sn, Ta, Os, Ir, and Pt) on a rutile (110) substrate using density functional theory calculations to determine their OER activities. The conventional volcano approach based on simple binding energies of reaction intermediates was implemented; in addition, the electrochemical-step symmetry index was employed to screen heterostructures for use as electrode materials. The results show that RuO2 and IrO2 are the most promising catalysts among all candidates. The scaling results provide insights into the intrinsic properties of the heterostructure as well as materials that can be used to lower the overpotential of the OER.


2018 ◽  
Vol 20 (15) ◽  
pp. 10048-10059 ◽  
Author(s):  
Dong-Hyuk Jung ◽  
Ji-Hwan Lee ◽  
Mehmet Emin Kilic ◽  
Aloysius Soon

The structural, vibrational, and diffusion properties of different ceria-based systems (including oxygen vacancies and rare-earth dopants (Sm or Gd)) have been examined using both first-principles density-functional theory calculations and finite-temperature molecular dynamics simulations.


2017 ◽  
Vol 5 (38) ◽  
pp. 20188-20194 ◽  
Author(s):  
Kazuaki Toyoura ◽  
Hirotaka Tai ◽  
Naoyuki Hatada ◽  
Kunihiko Shizume ◽  
Tetsuya Uda

The stable structure and diffusion mechanism of water in lanthanum sulfate La2(SO4)3 have been theoretically analyzed in a first-principles manner based on the density functional theory (DFT).


Author(s):  
I. Yu. Sklyadneva ◽  
Rolf Heid ◽  
Pedro Miguel Echenique ◽  
Evgueni Chulkov

Electron-phonon interaction in the Si(111)-supported rectangular √(7 ) ×√3 phases of In is investigated within the density-functional theory and linear-response. For both single-layer and double-layer √(7 ) ×√3 structures, it...


2012 ◽  
Vol 717-720 ◽  
pp. 415-418
Author(s):  
Yoshitaka Umeno ◽  
Kuniaki Yagi ◽  
Hiroyuki Nagasawa

We carry out ab initio density functional theory calculations to investigate the fundamental mechanical properties of stacking faults in 3C-SiC, including the effect of stress and doping atoms (substitution of C by N or Si). Stress induced by stacking fault (SF) formation is quantitatively evaluated. Extrinsic SFs containing double and triple SiC layers are found to be slightly more stable than the single-layer extrinsic SF, supporting experimental observation. Effect of tensile or compressive stress on SF energies is found to be marginal. Neglecting the effect of local strain induced by doping, N doping around an SF obviously increase the SF formation energy, while SFs seem to be easily formed in Si-rich SiC.


2016 ◽  
Vol 4 (29) ◽  
pp. 11498-11506 ◽  
Author(s):  
Taehun Lee ◽  
Yonghyuk Lee ◽  
Woosun Jang ◽  
Aloysius Soon

Using first-principles density-functional theory calculations, we investigate the advantage of using h-WO3 (and its surfaces) over the larger band gap γ-WO3 phase for the anode in water splitting. We demonstrate that h-WO3 is a good alternative anode material for optimal water splitting efficiencies.


2017 ◽  
Vol 19 (5) ◽  
pp. 3679-3687 ◽  
Author(s):  
Tao Yang ◽  
Masahiro Ehara

Using density functional theory calculations, we discussed the geometric and electronic structures and nucleation of small Co clusters on γ-Al2O3(100) and γ-Al2O3(110) surfaces.


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