Methyl substitution effects on the non-adiabatic dynamics of benzene: lifting three-state quasi-degeneracy at conical intersections

2020 ◽  
Vol 22 (5) ◽  
pp. 2814-2818
Author(s):  
Shunsuke Adachi ◽  
Toshinori Suzuki

Time-resolved photoelectron spectra of benzene and its methyl-derivatives (toluene and o-xylene) measured with a vacuum-UV laser clearly reveal both fast (A → B → C → D) and slow (B → C′ → D) relaxation channels from the S2 state.

2014 ◽  
Vol 112 (11) ◽  
Author(s):  
Kwanghsi Wang ◽  
Vincent McKoy ◽  
Paul Hockett ◽  
Michael S. Schuurman

2019 ◽  
Vol 21 (26) ◽  
pp. 13902-13905 ◽  
Author(s):  
Shunsuke Adachi ◽  
Tom Schatteburg ◽  
Alexander Humeniuk ◽  
Roland Mitrić ◽  
Toshinori Suzuki

Time-resolved photoelectron spectroscopy using vacuum-UV probe pulses enables observing ultrafast dynamics during and after passing through conical intersections.


2010 ◽  
Vol 81 (3) ◽  
Author(s):  
S. Y. Liu ◽  
Y. Ogi ◽  
T. Fuji ◽  
K. Nishizawa ◽  
T. Horio ◽  
...  

1981 ◽  
Vol 36 (11) ◽  
pp. 1246-1252 ◽  
Author(s):  
Michael H. Palmer ◽  
Isobel Simpson ◽  
J. Ross Wheeler

The photoelectron spectra of the tautomeric 1,2,3,- and 1,2,4-triazole and 1,2,3,4-tetrazole systems have been compared with the corresponding N-methyl derivatives. The dominant tautomers in the gas phase have been identified as 2 H-1,2,3-triazole, 1 H-1,2,4-triazole and 2H-tetrazole.Full optimisation of the equilibrium geometry by ab initio molecular orbital methods leads to the same conclusions, for relative stability of the tautomers in each of the triazoles, but the calculations wrongly predict the tetrazole tautomerism.


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Weifang Lu ◽  
Abebe T. Tarekegne ◽  
Yiyu Ou ◽  
Satoshi Kamiyama ◽  
Haiyan Ou

Abstract A comprehensive study of surface passivation effect on porous fluorescent silicon carbide (SiC) was carried out to elucidate the luminescence properties by temperature dependent photoluminescence (PL) measurement. The porous structures were prepared using an anodic oxidation etching method and passivated by atomic layer deposited (ALD) Al2O3 films. An impressive enhancement of PL intensity was observed in porous SiC with ALD Al2O3, especially at low temperatures. At temperatures below 150 K, two prominent PL emission peaks located at 517 nm and 650 nm were observed. The broad emission peak at 517 nm was attributed to originate from the surface states in the porous structures, which was supported by X-ray photoelectron spectra characterization. The emission peak at 650 nm is due to donor-acceptor-pairs (DAP) recombination via nitrogen donors and boron-related double D-centers in fluorescent SiC substrates. The results of the present work suggest that the ALD Al2O3 films can effectively suppress the non-radiative recombination for the porous structures on fluorescent SiC. In addition, we provide the evidence based on the low-temperature time-resolved PL that the mechanism behind the PL emission in porous structures is mainly related to the transitions via surface states.


2015 ◽  
Vol 142 (7) ◽  
pp. 074302 ◽  
Author(s):  
Guorong Wu ◽  
Simon P. Neville ◽  
Oliver Schalk ◽  
Taro Sekikawa ◽  
Michael N. R. Ashfold ◽  
...  

2004 ◽  
Vol 108 (13) ◽  
pp. 2405-2410 ◽  
Author(s):  
Antonis Koubenakis ◽  
Vladimir Frankevich ◽  
Juan Zhang ◽  
Renato Zenobi

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