Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges

2020 ◽  
Vol 5 (5) ◽  
pp. 787-807 ◽  
Author(s):  
Wugang Liao ◽  
Siwen Zhao ◽  
Feng Li ◽  
Cong Wang ◽  
Yanqi Ge ◽  
...  

This review presents recent advances and challenges in the interface engineering of 2D TMDCs and emerging electronics based on TMDCs.

2018 ◽  
Vol 47 (9) ◽  
pp. 3100-3128 ◽  
Author(s):  
Zehua Hu ◽  
Zhangting Wu ◽  
Cheng Han ◽  
Jun He ◽  
Zhenhua Ni ◽  
...  

This review summarizes the recent advances in understanding the effects of interface and defect engineering on the electronic and optical properties of TMDCs, as well as their applications in advanced (opto)electronic devices.


Nanoscale ◽  
2021 ◽  
Author(s):  
Zihao He ◽  
Xingyao Gao ◽  
Di Zhang ◽  
Ping Lu ◽  
Xuejing Wang ◽  
...  

Two-dimensional (2D) materials with robust ferromagnetic behavior have attracted great interest because of their potential applications in next-generation nanoelectronic devices. Aside from graphene and transition metal dichalcogenides, Bi-based layered oxide...


2016 ◽  
Vol 27 (19) ◽  
pp. 1603484 ◽  
Author(s):  
Yuda Zhao ◽  
Kang Xu ◽  
Feng Pan ◽  
Changjian Zhou ◽  
Feichi Zhou ◽  
...  

2019 ◽  
Vol 142 ◽  
pp. 111573 ◽  
Author(s):  
Huawen Hu ◽  
Ali Zavabeti ◽  
Haiyan Quan ◽  
Wuqing Zhu ◽  
Hongyang Wei ◽  
...  

2015 ◽  
Vol 44 (9) ◽  
pp. 2629-2642 ◽  
Author(s):  
Hualing Zeng ◽  
Xiaodong Cui

The ultimate goal of making atomically thin electronic devices stimulates intensive research on layered materials, in particular the group-VI transition metal dichalcogenides (TMDs).


2018 ◽  
Vol 47 (16) ◽  
pp. 6388-6409 ◽  
Author(s):  
Yuan Liu ◽  
Xidong Duan ◽  
Yu Huang ◽  
Xiangfeng Duan

We present an overview of the recent advances in two-dimensional transistors beyond graphene and transition metal dichalcogenides.


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