Computational Perspective on Recent Advances in Quantum Electronics: From Electron Quantum Optics to Nanoelectronic Devices and Systems

Quantum electronics has significantly evolved over the last decades. Where initially the clear focus was on light-matter interactions, nowadays approaches based on the electron's wave nature have solidified themselves as additional focus areas. This development is largely driven by continuous advances in electron quantum optics, electron based quantum information processing, electronic materials, and nanoelectronic devices and systems. The pace of research in all of these areas is astonishing and is accompanied by substantial theoretical and experimental advancements. What is particularly exciting is the fact that the computational methods, together with broadly available large-scale computing resources, have matured to such a degree so as to be essential enabling technologies themselves. These methods allow to predict, analyze, and design not only individual physical processes but also entire devices and systems, which would otherwise be very challenging or sometimes even out of reach with conventional experimental capabilities. This review is thus a testament to the increasingly towering importance of computational methods for advancing the expanding field of quantum electronics. To that end, computational aspects of a representative selection of recent research in quantum electronics are highlighted where a major focus is on the electron's wave nature. By categorizing the research into concrete technological applications, researchers and engineers will be able to use this review as a source for inspiration regarding problem-specific computational methods.

Control of Cu morphology on Ru-passivated and Ru-doped TaN Surfaces – promoting growth of 2D conducting copper for CMOS interconnects

Prolonging the lifetime of Cu as level 1 and level 2 interconnect metal in future nanoelectronic devices is a significant challenge as device dimensions continue to shrink and device structures...

Delamination of polyimide in hydrofluoric acid

Wet etching is a critical fabrication step for the mass production of micro and nanoelectronic devices. However, when an extremely corrosive acid such as hydrofluoric (HF) acid are used during etching, an undesirable damage might occur if the device includes a material that is not compatible with the acid. Polyimide thin films can serve as sacrificial/structural layers to fabricate freestanding or flexible devices. The importance of polyimide in microelectronics is due to its relatively low stress and compatibility with standard micromachining processes. In this work, a fast delamination process of a 4-μm-thin film of polyimide from a silicon substrate has been demonstrated. The films’ detachment has been performed using a wet-based etchant of HF acid. Specifically, the effect of HF concentration on the delamination time required to detach the polyimide film from the substrate has been investigated. This study is intended to provide the information on the compatibility of using polyimide films with HF, which can help in the design and fabrication of polyimide-based devices.

High-Temperature Single-Electron Transistors Based on Molecules and Small Nanoparticles.

The material of the defense of the dissertation for the degree of Doctor of Physical and Mathematical Sciences – the first in Russia doctoral dissertation on molecular singe-electronics is presented. The relevance of the development, creation and research of single-electron transistorswith high charge energy and operating temperature for the creation of fundamentally new nanoelectronic devices applicable in wide practice and ensuring breakthrough research in various fields is noted, the necessity of using quantum dots (molecules/nanoparticles) of atomic-molecular scale for this is shown, the formulation of the research problems is formulated, the physical and technological methods of fabrication and analysis used are listed, the main results of the work are presented and their significance for the development of highly sensitive sensing, quantum informatics and quantum metrology is discussed.

Phase composition and concentration of yttriumin films during the deposition of aluminumand aluminum alloys from the gas phase

The work is devoted to the study of the stabilizing effect of yttrium additions during the deposition of thin aluminum films, which are used for the manufacture of elements of micro- and nanoelectronic devices. The surfaces of Al films doped with aluminum oxide were investigated using a scanning electron microscope before and after annealing for 300420 s at a temperature of 500 C. It is shown that fine alumina particles are uniformly distributed on the surface of the films during thermal evaporation of a wire made of an Al Al2O3 alloy. By the method of quantitative metallography, the content of the AlxOy phase in the Al films was determined: when spraying wire from the Al Al2O3 alloy, its content was 1012% of the mass fraction; when spraying wire made of Al Al2O3 alloy and Al wire in a ratio of 50:50 1% mass fraction.

MICRO- AND NANOELECTRONICS - 2021

The Book of Abstracts contains the abstracts of the papers presented at the biannual International Conference “Micro- and Nanoelectronics - 2021” (ICMNE-2021) including the extended Session “Quantum Informatics” (QI-2021). The Conference topics cover the most of the areas dedicated to the physics of integrated micro- and nanoelectronic devices and related micro- and nanotechnologies. The Conference is focused on recent progress in those areas. It continues the series of the AllRussian Conferences (since 1994) and the International Conferences (since 2003).