Enhanced thermoelectric performance of GeTe through in situ microdomain and Ge-vacancy control

2019 ◽  
Vol 7 (25) ◽  
pp. 15181-15189 ◽  
Author(s):  
Khasim Saheb Bayikadi ◽  
Raman Sankar ◽  
Chien Ting Wu ◽  
Chengliang Xia ◽  
Yue Chen ◽  
...  

The thermoelectric figure-of-merit (ZT) for GeTe powder is able to be raised from ∼0.8 to 1.37 at high temperature near ∼500 °C by tuning the Ge vacancy level through a reversible in situ route.

2018 ◽  
Vol 6 (9) ◽  
pp. 4079-4087 ◽  
Author(s):  
Lirong Song ◽  
Anders B. Blichfeld ◽  
Jiawei Zhang ◽  
Hidetaka Kasai ◽  
Bo B. Iversen

Ag doping in β-Zn4Sb3 leads to the enhanced thermoelectric figure-of-merit (zT) and improved high-temperature thermal stability.


Author(s):  
Enamul Haque

This article reports the extraordinary thermoelectric figure of merit (ZT) of NaBaBi: degenerate bands, instead of the valley degeneracy of Bi2Te3, highly non-parabolic bands, and low DOS near the Fermi level of NaBaBi lead to an extraordinary ZTisotropic ≈ 1.60 at 350 K.


2020 ◽  
Vol 22 (4) ◽  
pp. 2081-2086 ◽  
Author(s):  
Taiki Tanishita ◽  
Koichiro Suekuni ◽  
Hirotaka Nishiate ◽  
Chul-Ho Lee ◽  
Michitaka Ohtaki

Co-substitution of Ge and P for Sb in Cu3SbS4 famatinite boosted dimensionless thermoelectric figure of merit.


2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.


RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114825-114829 ◽  
Author(s):  
Tessera Alemneh Wubieneh ◽  
Cheng-Lung Chen ◽  
Pai Chun Wei ◽  
Szu-Yuan Chen ◽  
Yang-Yuan Chen

Ge doping enables to enhance the thermoelectric figure of merit of SnSe..


2020 ◽  
Vol 22 (26) ◽  
pp. 14621-14629 ◽  
Author(s):  
Suiting Ning ◽  
Shan Huang ◽  
Ziye Zhang ◽  
Renqi Zhang ◽  
Ning Qi ◽  
...  

The thermoelectric figure of merit (ZT) in LaPtBi shows an overall increase with increasing hydrostatic pressure.


2020 ◽  
Vol 4 (3) ◽  
pp. 875-880
Author(s):  
D. Li ◽  
J. H. Zhang ◽  
J. M. Li ◽  
J. Zhang ◽  
X. Y. Qin

Herein, a facile solution chemical route has been developed for synthesis of Ag2Se-based alloy nanocrystals and high thermoelectric figure of merit has been obtained.


2016 ◽  
Vol 3 (12) ◽  
pp. 1566-1571 ◽  
Author(s):  
Yan-Chun Chen ◽  
Hua Lin ◽  
Li-Ming Wu

Synergistic effect of Se-deficiency and CuI-doping significantly enhances the thermoelectric figure-of-merit of the n-type polycrystalline In4Se3-based materials via improving the power factor. With In4Se2.95(CuI)0.01, ZT = 1.34 at 723 K, the highest value obtained for Pb-free polycrystalline In4Se3-based materials to date.


Author(s):  
Tingdong Zhang ◽  
Shuping Deng ◽  
Xiaodie Zhao ◽  
Xuefeng Ruan ◽  
Ning Qi ◽  
...  

A high thermoelectric figure of merit ZT of 2.5 at 730 K is achieved in p-type Ge1−xSmxTe through synergetic optimization of electrical and thermal transport properties. Sm doping effectively suppresses...


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