Regulation of Ge Vacancies through Sm Doping boosting Superior Thermoelectric Performance in GeTe

Author(s):  
Tingdong Zhang ◽  
Shuping Deng ◽  
Xiaodie Zhao ◽  
Xuefeng Ruan ◽  
Ning Qi ◽  
...  

A high thermoelectric figure of merit ZT of 2.5 at 730 K is achieved in p-type Ge1−xSmxTe through synergetic optimization of electrical and thermal transport properties. Sm doping effectively suppresses...

Author(s):  
Shagun Nag ◽  
Ranber Singh ◽  
Ranjan Kumar

The enhancement in the thermoelectric figure of merit (ZT) of a material is limited by the interplay of the electronic transport coefficients. Here we report the greatly enhanced thermoelectric performance...


RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114825-114829 ◽  
Author(s):  
Tessera Alemneh Wubieneh ◽  
Cheng-Lung Chen ◽  
Pai Chun Wei ◽  
Szu-Yuan Chen ◽  
Yang-Yuan Chen

Ge doping enables to enhance the thermoelectric figure of merit of SnSe..


2018 ◽  
Vol 6 (46) ◽  
pp. 23473-23477 ◽  
Author(s):  
Abdul Basit ◽  
Junyou Yang ◽  
Qinghui Jiang ◽  
Jiwu Xin ◽  
Xin Li ◽  
...  

The thermoelectric performance of MnTe has been enhanced with the addition of Sb2Te3, which improves the ZT ∼77% at 873 K in 1.5 at% Sb2Te3 added MnTe sample.


2018 ◽  
Vol 6 (9) ◽  
pp. 4079-4087 ◽  
Author(s):  
Lirong Song ◽  
Anders B. Blichfeld ◽  
Jiawei Zhang ◽  
Hidetaka Kasai ◽  
Bo B. Iversen

Ag doping in β-Zn4Sb3 leads to the enhanced thermoelectric figure-of-merit (zT) and improved high-temperature thermal stability.


2012 ◽  
Vol 621 ◽  
pp. 167-171
Author(s):  
Tao Hua Liang ◽  
Shi Qing Yang ◽  
Zhi Chen ◽  
Qing Xue Yang

p-type Bi0.5Sb1.5Te3+xTe thermoelectric crystals with various percentages of Te (x = 0.00 wt.%–3.00 wt.%) excess were prepared by the gradient freeze method. By doping with different Te contents, anti-site defects, Te vacancies and hole carrier concentrations were controlled. The Seebeck coefficient, resistivity, thermal conductivity, carrier concentration, and mobility were measured. The relationships between the Te content and thermoelectric properties were investigated in detail. The results suggested that the thermoelectric figure of merit ZT of the Bi0.5Sb1.5Te3+0.09wt.% crystals was 1.36 near room temperature, the optimum carrier concentration was 1.25 × 1019 cm-3, and the mobility was 1480 cm2 V-1 S-1, respectively.


Author(s):  
Enamul Haque

This article reports the extraordinary thermoelectric figure of merit (ZT) of NaBaBi: degenerate bands, instead of the valley degeneracy of Bi2Te3, highly non-parabolic bands, and low DOS near the Fermi level of NaBaBi lead to an extraordinary ZTisotropic ≈ 1.60 at 350 K.


2020 ◽  
Vol 22 (4) ◽  
pp. 2081-2086 ◽  
Author(s):  
Taiki Tanishita ◽  
Koichiro Suekuni ◽  
Hirotaka Nishiate ◽  
Chul-Ho Lee ◽  
Michitaka Ohtaki

Co-substitution of Ge and P for Sb in Cu3SbS4 famatinite boosted dimensionless thermoelectric figure of merit.


2007 ◽  
Vol 46 (No. 27) ◽  
pp. L673-L675 ◽  
Author(s):  
Takeyuki Sekimoto ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka

RSC Advances ◽  
2021 ◽  
Vol 11 (39) ◽  
pp. 24456-24465
Author(s):  
Rapaka S. C. Bose ◽  
K. Ramesh

Polycrystalline p-type Sb1.5Bi0.5Te3 (SBT) and n-type Bi2Te2.7Se0.3 (BTS) compounds possessing layered crystal structure show anisotropic electronic and thermal transport properties.


2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.


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