The effects of Ge doping on the thermoelectric performance of p-type polycrystalline SnSe

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114825-114829 ◽  
Author(s):  
Tessera Alemneh Wubieneh ◽  
Cheng-Lung Chen ◽  
Pai Chun Wei ◽  
Szu-Yuan Chen ◽  
Yang-Yuan Chen

Ge doping enables to enhance the thermoelectric figure of merit of SnSe..

Author(s):  
Tingdong Zhang ◽  
Shuping Deng ◽  
Xiaodie Zhao ◽  
Xuefeng Ruan ◽  
Ning Qi ◽  
...  

A high thermoelectric figure of merit ZT of 2.5 at 730 K is achieved in p-type Ge1−xSmxTe through synergetic optimization of electrical and thermal transport properties. Sm doping effectively suppresses...


2018 ◽  
Vol 6 (9) ◽  
pp. 4079-4087 ◽  
Author(s):  
Lirong Song ◽  
Anders B. Blichfeld ◽  
Jiawei Zhang ◽  
Hidetaka Kasai ◽  
Bo B. Iversen

Ag doping in β-Zn4Sb3 leads to the enhanced thermoelectric figure-of-merit (zT) and improved high-temperature thermal stability.


2012 ◽  
Vol 621 ◽  
pp. 167-171
Author(s):  
Tao Hua Liang ◽  
Shi Qing Yang ◽  
Zhi Chen ◽  
Qing Xue Yang

p-type Bi0.5Sb1.5Te3+xTe thermoelectric crystals with various percentages of Te (x = 0.00 wt.%–3.00 wt.%) excess were prepared by the gradient freeze method. By doping with different Te contents, anti-site defects, Te vacancies and hole carrier concentrations were controlled. The Seebeck coefficient, resistivity, thermal conductivity, carrier concentration, and mobility were measured. The relationships between the Te content and thermoelectric properties were investigated in detail. The results suggested that the thermoelectric figure of merit ZT of the Bi0.5Sb1.5Te3+0.09wt.% crystals was 1.36 near room temperature, the optimum carrier concentration was 1.25 × 1019 cm-3, and the mobility was 1480 cm2 V-1 S-1, respectively.


Author(s):  
Enamul Haque

This article reports the extraordinary thermoelectric figure of merit (ZT) of NaBaBi: degenerate bands, instead of the valley degeneracy of Bi2Te3, highly non-parabolic bands, and low DOS near the Fermi level of NaBaBi lead to an extraordinary ZTisotropic ≈ 1.60 at 350 K.


2020 ◽  
Vol 22 (4) ◽  
pp. 2081-2086 ◽  
Author(s):  
Taiki Tanishita ◽  
Koichiro Suekuni ◽  
Hirotaka Nishiate ◽  
Chul-Ho Lee ◽  
Michitaka Ohtaki

Co-substitution of Ge and P for Sb in Cu3SbS4 famatinite boosted dimensionless thermoelectric figure of merit.


2007 ◽  
Vol 46 (No. 27) ◽  
pp. L673-L675 ◽  
Author(s):  
Takeyuki Sekimoto ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka

Author(s):  
А.А. Шабалдин ◽  
П.П. Константинов ◽  
Д.А. Курдюков ◽  
Л.Н. Лукьянова ◽  
А.Ю. Самунин ◽  
...  

AbstractNanocomposite thermoelectrics based on Bi_0.45Sb_1.55Te_2.985 solid solution of p -type conductivity are fabricated by the hot pressing of nanopowders of this solid solution with the addition of SiO_2 microparticles. Investigations of the thermoelectric properties show that the thermoelectric power of the nanocomposites increases in a wide temperature range of 80–420 K, while the thermal conductivity considerably decreases at 80–320 K, which, despite a decrease in the electrical conductivity, leads to an increase in the thermoelectric efficiency in the nanostructured material without the SiO_2 addition by almost 50% (at 300 K). When adding SiO_2, the efficiency decreases. The initial thermoelectric fabricated without nanostructuring, in which the maximal thermoelectric figure of merit ZT = 1 at 390 K, is most efficient at temperatures above 350 K.


2020 ◽  
Vol 22 (26) ◽  
pp. 14621-14629 ◽  
Author(s):  
Suiting Ning ◽  
Shan Huang ◽  
Ziye Zhang ◽  
Renqi Zhang ◽  
Ning Qi ◽  
...  

The thermoelectric figure of merit (ZT) in LaPtBi shows an overall increase with increasing hydrostatic pressure.


2020 ◽  
Vol 4 (3) ◽  
pp. 875-880
Author(s):  
D. Li ◽  
J. H. Zhang ◽  
J. M. Li ◽  
J. Zhang ◽  
X. Y. Qin

Herein, a facile solution chemical route has been developed for synthesis of Ag2Se-based alloy nanocrystals and high thermoelectric figure of merit has been obtained.


2016 ◽  
Vol 3 (12) ◽  
pp. 1566-1571 ◽  
Author(s):  
Yan-Chun Chen ◽  
Hua Lin ◽  
Li-Ming Wu

Synergistic effect of Se-deficiency and CuI-doping significantly enhances the thermoelectric figure-of-merit of the n-type polycrystalline In4Se3-based materials via improving the power factor. With In4Se2.95(CuI)0.01, ZT = 1.34 at 723 K, the highest value obtained for Pb-free polycrystalline In4Se3-based materials to date.


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