scholarly journals Enhanced thermoelectric performance and high-temperature thermal stability of p-type Ag-doped β-Zn4Sb3

2018 ◽  
Vol 6 (9) ◽  
pp. 4079-4087 ◽  
Author(s):  
Lirong Song ◽  
Anders B. Blichfeld ◽  
Jiawei Zhang ◽  
Hidetaka Kasai ◽  
Bo B. Iversen
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Ag Doping ◽  
P Type ◽  
Thermal Stability Of

Ag doping in β-Zn4Sb3 leads to the enhanced thermoelectric figure-of-merit (zT) and improved high-temperature thermal stability.

The effects of Ge doping on the thermoelectric performance of p-type polycrystalline SnSe

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114825-114829 ◽  
Author(s):  
Tessera Alemneh Wubieneh ◽  
Cheng-Lung Chen ◽  
Pai Chun Wei ◽  
Szu-Yuan Chen ◽  
Yang-Yuan Chen
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type ◽  
Ge Doping

Ge doping enables to enhance the thermoelectric figure of merit of SnSe..

Enhanced thermoelectric performance of GeTe through in situ microdomain and Ge-vacancy control

2019 ◽  
Vol 7 (25) ◽  
pp. 15181-15189 ◽  
Author(s):  
Khasim Saheb Bayikadi ◽  
Raman Sankar ◽  
Chien Ting Wu ◽  
Chengliang Xia ◽  
Yue Chen ◽  
...  
Keyword(s):  
High Temperature ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Vacancy Level

The thermoelectric figure-of-merit (ZT) for GeTe powder is able to be raised from ∼0.8 to 1.37 at high temperature near ∼500 °C by tuning the Ge vacancy level through a reversible in situ route.

Regulation of Ge Vacancies through Sm Doping boosting Superior Thermoelectric Performance in GeTe

2022 ◽  
Author(s):  
Tingdong Zhang ◽  
Shuping Deng ◽  
Xiaodie Zhao ◽  
Xuefeng Ruan ◽  
Ning Qi ◽  
...  
Keyword(s):  
Transport Properties ◽  
Thermal Transport ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermal Transport Properties ◽  
P Type

A high thermoelectric figure of merit ZT of 2.5 at 730 K is achieved in p-type Ge1−xSmxTe through synergetic optimization of electrical and thermal transport properties. Sm doping effectively suppresses...

Optimization of High Thermoelectric Figure-of-Merit in p-type Ag1-x(Pb1-ySny)mSb1-zTem+2

2007 ◽  
Vol 1044 ◽  
Author(s):  
Kyunghan Ahn ◽  
Mercouri G Kanatzidis
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties ◽  
High Performance ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Practical Applications ◽  
P Type

AbstractThe Ag1-x(Pb1-ySny)mSb1-zTem+2 compounds have been found to exhibit high performance p-type thermoelectric properties and are now being considered for practical applications. In this paper, various m values and silver concentrations were investigated to determine the effect on thermoelectric properties. Also, the charge-compensated compounds were studied in order to eliminate the problem of excess tellurium evaporation at high temperature.

Thermal Stability of p-type Bi2Te3/Sb2Te3 and n-type Bi2Te3/Bi2Te2-xSex Thermoelectric Superlattice Thin Film Devices

2003 ◽  
Vol 793 ◽  
Author(s):  
K. D. Coonley ◽  
B. C. O'Quinn ◽  
J. C. Caylor ◽  
R. Venkatasubramanian
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Figure Of Merit ◽  
Elevated Temperatures ◽  
Power Conversion ◽  
Continuous Exposure ◽  
Thermoelectric Figure ◽  
P Type ◽  
Thermal Stability Of ◽  
Thin Film Devices

ABSTRACTThermolectric devices have been constructed using Bi2Te3/Sb2Te3 and Bi2Te3/Bi2Te2-xSex superlattice thin films. Since these devices are intended for use in systems that will operate at elevated temperatures over their lifetime as in many power conversion applications, thermal stability of the thermoelectric figure of merit is an important consideration. The ZTe of p-type and n-type superlattice thin film elements was evaluated at specific intervals during exposure to elevated temperatures of 150°C for up to 60 hrs. Results indicate that the figure of merit for p- and n-type superlattice films is not compromised over time when exposed to these operating temperatures. In fact, both p- and n-type superlattice thin film ZTe remains very constant or improves slightly when subjected to continuous exposure to elevated temperatures. Evaluation of these thin film thermoelements is reported and implications of these results are considered for thin film thermoelectric modules.

High Thermoelectric Performance of p-Type Bi0.5Sb1.5Te3+xTe Crystals Prepared via Gradient Freezing

2012 ◽  
Vol 621 ◽  
pp. 167-171
Author(s):  
Tao Hua Liang ◽  
Shi Qing Yang ◽  
Zhi Chen ◽  
Qing Xue Yang
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type

p-type Bi0.5Sb1.5Te3+xTe thermoelectric crystals with various percentages of Te (x = 0.00 wt.%–3.00 wt.%) excess were prepared by the gradient freeze method. By doping with different Te contents, anti-site defects, Te vacancies and hole carrier concentrations were controlled. The Seebeck coefficient, resistivity, thermal conductivity, carrier concentration, and mobility were measured. The relationships between the Te content and thermoelectric properties were investigated in detail. The results suggested that the thermoelectric figure of merit ZT of the Bi0.5Sb1.5Te3+0.09wt.% crystals was 1.36 near room temperature, the optimum carrier concentration was 1.25 × 1019 cm-3, and the mobility was 1480 cm2 V-1 S-1, respectively.

Extraordinary thermoelectric performance of NaBaBi with degenerate and highly non-parabolic bands compared to LiBaSb and Bi2Te3

2021 ◽  
Author(s):  
Enamul Haque
Keyword(s):  
Fermi Level ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure

This article reports the extraordinary thermoelectric figure of merit (ZT) of NaBaBi: degenerate bands, instead of the valley degeneracy of Bi2Te3, highly non-parabolic bands, and low DOS near the Fermi level of NaBaBi lead to an extraordinary ZTisotropic ≈ 1.60 at 350 K.

A strategy for boosting the thermoelectric performance of famatinite Cu3SbS4

2020 ◽  
Vol 22 (4) ◽  
pp. 2081-2086 ◽  
Author(s):  
Taiki Tanishita ◽  
Koichiro Suekuni ◽  
Hirotaka Nishiate ◽  
Chul-Ho Lee ◽  
Michitaka Ohtaki
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Co Substitution

Co-substitution of Ge and P for Sb in Cu3SbS4 famatinite boosted dimensionless thermoelectric figure of merit.

High-Thermoelectric Figure of Merit Realized in p-Type Half-Heusler Compounds: ZrCoSnxSb1-x

2007 ◽  
Vol 46 (No. 27) ◽  
pp. L673-L675 ◽  
Author(s):  
Takeyuki Sekimoto ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Heusler Compounds ◽  
Thermoelectric Figure ◽  
P Type

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

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