Studies of molecular interactions in the vapour phase by ultraviolet photoelectron spectroscopy: electronic structures of donor–acceptor complexes including hydrogen bonded dimers and van der Waals molecules

1991 ◽  
Vol 20 (4) ◽  
pp. 477-502 ◽  
Author(s):  
C. N. R. Rao ◽  
T. Pradeep
1987 ◽  
Vol 91 (14) ◽  
pp. 3750-3758 ◽  
Author(s):  
James W. Hager ◽  
Gary W. Leach ◽  
David R. Demmer ◽  
Stephen C. Wallace

2000 ◽  
Vol 622 ◽  
Author(s):  
J.T. Wolan ◽  
Y. Koshka ◽  
S.E. Saddow ◽  
Yu. V. Melnik ◽  
V. Dmitriev

ABSTRACTIn this study, the near-surface regions of air-exposed thin GaN layers deposited by hydride vapour phase (HVPE) epitaxy on 6H-SiC substrates have been examined. Chemical-state identification and in-depth elemental distribution profiles are evaluated using angle-resolved X-ray photoelectron spectroscopy (ARXPS) and secondary ion mass spectroscopy (SIMS). The epilayers show a high degree of chemical purity as determined by XPS and SIMS. Low temperature photoluminescence (PL) were performed and is dominated by donor-acceptor pairs (DAP) emission. Layer thickness was measured to be ∼ 600-700 nm and an abrupt, well-defined heterointerface is observed using scanning electron microscopy (SEM) and SIMS.


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